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Jonathan Abrokwah

Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$
2007 · Richard J. W. Hill, David A. J. Moran, et al. · IEEE Electron Device Letters · 169
Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
2002 · M. Passlack, J.K. Abrokwah, et al. · IEEE Electron Device Letters · 88
High mobility NMOSFET structure with high-/spl kappa/ dielectric
2005 · M. Passlack, R. Droopad, et al. · IEEE Electron Device Letters · 79
Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy
2003 · Z. Yu, C. D. Overgaard, et al. · Applied Physics Letters · 73
Enhancement-Mode GaAs n-Channel MOSFET
2006 · Karthik Rajagopalan, Jonathan Abrokwah, et al. · IEEE Electron Device Letters · 68
High Mobility III-V MOSFETs For RF and Digital Applications
2007 · M. Passlack, A. Zlotnicka, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 60
Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE
1983 · B. J. Skromme, T. S. Low, et al. · Journal of Electronic Materials · 60
Planar monolithic integration of a photodiode and a GaAs preamplifier
1983 · R. M. Kolbas, J. Abrokwah, et al. · Applied Physics Letters · 56
1-$\mu\hbox{m}$ Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm
2007 · K. Rajagopalan, R. Droopad, et al. · IEEE Electron Device Letters · 52
Compact Harmonic Filter Design and Fabrication Using IPD Technology
2007 · Lianjun Liu, Shun-Meen Kuo, et al. · IEEE Transactions on Components and Packaging Technologies · 46
Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface
1985 · N.C. Cirillo, M.S. Shur, et al. · IEEE Electron Device Letters · 43
Implant-free high-mobility flatband MOSFET: principles of operation
2006 · M. Passlack, K. Rajagopalan, et al. · IEEE Transactions on Electron Devices · 40
A manufacturable complementary GaAs process
2002 · J.K. Abrokwah, J.H. Huang, et al. · 39
Inverted GaAs/AlGaAs modulation-doped field-effect transistors with extremely high transconductances
1986 · N.C. Cirillo, M.S. Shur, et al. · IEEE Electron Device Letters · 39
Gate dielectrics on compound semiconductors
2005 · R. Droopad, M. Passlack, et al. · Microelectronic Engineering · 31
New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation
1986 · M.S. Shur, D.K. Arch, et al. · IEEE Electron Device Letters · 31
Initial stages of Ba adsorption on the Si(100)−(2×1) surface at room temperature
1999 · X. Yao, Xiaoming Hu, et al. · Physical review. B, Condensed matter · 28
Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors
1987 · J. Baek, M.S. Shur, et al. · IEEE Transactions on Electron Devices · 28
Complementary heterostructure insulated gate field effect transistors (HIGFETs)
1985 · N.C. Cirillo, M.S. Shur, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 28
Liquid phase epitaxial growth and characterization of InAsxSb1−;x AND In1−yGaySb ON (111)B InSb substrates
1981 · J. K. Abrokwah, M. Gershenzon · Journal of Electronic Materials · 26
Interface charge and nonradiative carrier recombination in Ga2O3–GaAs interface structures
1999 · M. Passlack, Z. Yu, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 23
New mechanism of gate current in heterostructure insulated gate field-effect transistors
1986 · Jun Ho Baek, M. Shur, et al. · IEEE Electron Device Letters · 23
Motorola MEMS switch technology for high frequency applications
2002 · A.P. De Silva, C. Vaughan, et al. · 22
Complementary GaAs(CGaAs): a high performance BiCMOS alternative
2002 · B. Bernhardt, M. LaMacchia, et al. · IEEE Gallium Arsenide Integrated Circuit Symposium (GaAs IC) · 20
Thermally induced oxide crystallinity and interface destruction in Ga2O3–GaAs structures
2003 · M. Passlack, J. K. Abrokwah, et al. · Applied Physics Letters · 19
Works count: 97
Citation count: 1,611
H-index: 22
I10-index: 45
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