Author

M. L. Young

Observed names: M L Young, M.L. Young

Observed institution: University of Surrey

OpenAlex ID: A5110141566

Metal organic vapour phase epitaxy of indium phosphide

1983 · S.J. Bass, C. Pickering, et al. · Journal of Crystal Growth · 62

Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment

1986 · M. Astles, H. Hill, et al. · Journal of Electronic Materials · 54

Concentration dependence of the minority carrier diffusion length and lifetime in GaP

1974 · M L Young, D R Wight · Journal of Physics D Applied Physics · 48

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High quality epitaxial indium phosphide and indium alloys grown using trimethylindium and phosphine in an atmospheric pressure reactor

1984 · S.J. Bass, M.L. Young · Journal of Crystal Growth · 45

The growth and properties of In-doped metalorganic vapor phase epitaxy interdiffused multilayer process (HgCd)Te

1991 · J. S. Gough, M. R. Houlton, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 32

The optoelectronic properties of donors in organo-metallic grown zinc selenide

1983 · P.J. Dean, A.D. Pitt, et al. · Physica B+C · 26

The Czochralski growth of gallium antimonide single crystals under reducing conditions

1982 · B. Cockayne, V.W. Steward, et al. · Journal of Crystal Growth · 25

Green electroluminescence in GaP diodes and its correlation with cathodoluminescence measurements

1973 · D R Wight, J C H Birbeck, et al. · Journal of Physics D Applied Physics · 20

Electrical inhomogeneity in 1" diameter partially dislocation-free undoped LEC GaAs

1988 · M L Young, D A O Hope, et al. · Semiconductor Science and Technology · 16

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Effect of heterostructure on the hole diffusion length of epitaxial GaAs

1973 · M. L. Young, M. C. Rowland · physica status solidi (a) · 16

Pressure and composition dependence of high field instabilities in In As1−xPx alloys

1978 · A. El-Sabbahy, A.R. Adams, et al. · Solid-State Electronics · 13

Liquid phase epitaxial growth and assessment of Pb1−xSn x Te alloys

1981 · M G Astles, M L Young · Journal of Electronic Materials · 12

The role of surface adsorbates in the metalorganic vapor phase epitaxial growth of (Hg,Cd)Te onto (100) GaAs Substrates

1995 · J. Giess, J. E. Hails, et al. · Journal of Electronic Materials · 11

Control of the electrical properties of In-doped HgCdTe grown by MOVPE for IR detector applications

1991 · M L Young, M G Astles, et al. · Semiconductor Science and Technology · 11

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Room-temperature stability of the electrical properties of metalorganic vapor phase epitaxial Hg1−xCdxTe on GaAs

1991 · M. L. Young, J. Giess · Journal of Applied Physics · 10

n-type doping of MCT layers grown by MOVPE (IMP)

1991 · J.S. Gough, M.R. Houlton, et al. · Materials Letters · 10

Variation of carrier concentration in Pb0.8Sn0.2Te with annealing and growth temperature

1977 · C Pickering, W R Harding, et al. · Journal of Physics D Applied Physics · 10

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Sub-threshold velocity-field characteristics of InAs1-xPx alloys

1977 · M. L. Young, C. P. Fender · physica status solidi (a) · 9

The electrical properties of undoped and oxygendoped GaP grown by the liquid encapsulation technique

1971 · M L Young, S J Bass · Journal of Physics D Applied Physics · 7

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Accurate determination of 77K hole concentration in Pb0.8Sn0.2Te from near-room-temperature thermoelectric measurements

1978 · M L Young · Journal of Physics D Applied Physics · 5

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Control of Hole Concentration in Liquid-Phase Epitaxial Layers of PbTe by As Doping

1979 · M. G. Astles, C. Pickering, et al. · Journal of Electronic Materials · 3

Analysis of IMF-grown CdxHg1 − xTe using helium ion RBS

1992 · A.J. Avery, D.J. Diskett, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2

Assessment of electrical inhomogeneity of undoped and doped Hg1−xCdxTe MOVPE (IMP) layers by variable magnetic field hall profile measurements

1993 · M. L. Young, J. Giess, et al. · Journal of Electronic Materials · 1

The growth and properties of In-doped metalorganic vapor phase epitaxy interdiffused multilayer process (HGCd)Te

1991 · J. S. Gough, M. R. Houlton, et al. · AIP conference proceedings

Electrical inhomogeneity in Ga-rich undoped GaAs crystals: Dependence on melt stoichiometry and dislocation distribution

1990 · M. L. Young, G. T. Brown, et al. · Journal of Applied Physics

Works count: 26

Citation count: 448

H-index: 12

I10-index: 17