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M.J.H. van Dal

Observed names: Dal, van, M.J.H., M J H van Dal, M van Dal, M. J. H. Dal, M. J. H. Van Dal, M. J. H. van Dal, M. Van Dal, M. van Dal, M.J.H van Dal, M.J.H. VAN DAL, M.J.H. Van Dal, M.J.H.van Dal, Mark J. H. Van Dal, Mark J. H. van Dal, Mark J.H. Van Dal, Mark J.H. van Dal, Mark Van Dal, Mark van Dal, van Dal, M.J.H.
Observed institutions: Synopsys (Switzerland), University of Padua, University College Cork, IMEC, Taiwan Semiconductor Manufacturing Company (Taiwan), Philips (Netherlands), Philips (United States), NXP (Belgium), Philips (Belgium), Tyndall National Institute, Texas Instruments (United States), Eindhoven University of Technology, KU Leuven
ORCID: 0000-0002-6471-9423
Observed ORCID: 0000-0002-6471-9423
OpenAlex ID: A5110143844
The Kirkendall effect in multiphase diffusion
2003 · A Paul, M.J.H van Dal, et al. · Acta Materialia · 201
Ni- and Co-based silicides for advanced CMOS applications
2003 · J.A. Kittl, A. Lauwers, et al. · Microelectronic Engineering · 121
Intrinsic diffusion and Kirkendall effect in Ni–Pd and Fe–Pd solid solutions
2000 · M.J.H. van Dal, M.C.L.P. Pleumeekers, et al. · Acta Materialia · 111
Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range
2008 · N. Stavitski, M.J.H. van Dal, et al. · IEEE Electron Device Letters · 105
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Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors
2007 · R. Duffy, M. J. H. Van Dal, et al. · Applied Physics Letters · 102
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
2007 · M.J.H. van Dal, N. Collaert, et al. · Symposium on VLSI Technology · 82
Microstructural Stability of the Kirkendall Plane in Solid-State Diffusion
2001 · M. J. H. van Dal, A. M. Gusak, et al. · Physical Review Letters · 72
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Silicides and germanides for nano-CMOS applications
2008 · J.A. Kittl, K. Opsomer, et al. · Materials Science and Engineering B · 70
Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates
2005 · J.A. Kittl, M.A. Pawlak, et al. · IEEE Electron Device Letters · 70
Intrinsic diffusion in Ni3Al system
2003 · C Cserháti, A Paul, et al. · Intermetallics · 70
Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping
2014 · Mark J. H. van Dal, Georgios Vellianitis, et al. · IEEE Transactions on Electron Devices · 68
Ni based silicides for 45nm CMOS and beyond
2004 · Anne Lauwers, Jorge A. Kittl, et al. · Materials Science and Engineering B · 65
Multi-gate devices for the 32nm technology node and beyond
2008 · N. Collaert, A. De Keersgieter, et al. · Solid-State Electronics · 61
Multi-gate devices for the 32nm technology node and beyond
2007 · N. Collaert, A. De Keersgieter, et al. · European Solid-State Device Research Conference · 59
Formation of Co–Si intermetallics in bulk diffusion couples. Part I. Growth kinetics and mobilities of species in the silicide phases
2001 · M.J.H van Dal, D.G.G.M Huibers, et al. · Intermetallics · 53
Spatio-temporal instabilities of the Kirkendall marker planes during interdiffusion in β'-AuZn
2002 · M. J. H. Van Dal, A. M. Gusak, et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 48
Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs
2018 · M.J.H. van Dal, G. Vellianitis, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 45
Scaled p-channel Ge FinFET with optimized gate stack and record performance integrated on 300mm Si wafers
2013 · B. Duriez, G. Vellianitis, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 44
Demonstration of scaled Ge p-channel FinFETs integrated on Si
2012 · M. J. H. van Dal, G. Vellianitis, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 43
An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS
2012 · R. Oxland, S. W. Chang, et al. · IEEE Electron Device Letters · 43
Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond
2012 · G. Eneman, D. P. Brunco, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 42
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations
2011 · F Conzatti, N Serra, et al. · IEEE Transactions on Electron Devices · 40
Permeation of nitrogen in solid nickel and deformation phenomena accompanying internal nitridation
1999 · A.A Kodentsov, M.J.H van Dal, et al. · Acta Materialia · 40
Germanium-based transistors for future high performance and low power logic applications
2015 · Yee-Chia Yeo, Xiao Gong, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 38
Diffusion studies and re-examination of the Kirkendall effect in the Au–Ni system
2000 · M.J.H van Dal, M.C.L.P Pleumeekers, et al. · Journal of Alloys and Compounds · 38
Works count: 125
Citation count: 2,728
H-index: 30
I10-index: 64
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