Author

H. Burkhard

Observed names: BURKHARD, HERBERT, DR., H Burkhard, H. BURKHARD, H. Burkhard H. Burkhard, Herbert Burkhard, Herbert Burkhard Herbert Burkhard

Institution: Deutsche Bundespost

Observed institutions: University of Stuttgart, University of Cologne, Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute, Deutsche Bundespost, Max Planck Institute for Solid State Research, Deutsche Telekom (Germany), Deutsche Telekom (United Kingdom), Hamburg University of Technology, RWTH Aachen University, Technische Universität Braunschweig

OpenAlex ID: A5110150000

Optical properties of In1−xGaxP1−yAsy, InP, GaAs, and GaP determined by ellipsometry

1982 · H. Burkhard, H. W. Dinges, et al. · Journal of Applied Physics · 182

Chirp reduction of directly modulated semiconductor lasers at 10 Gb/s by strong CW light injection

1994 · S. Mohrdiek, H. Burkhard, et al. · Journal of Lightwave Technology · 110

10 Gbit/s all-optical Boolean XOR with SOA fibreSagnac gate

1999 · T. Houbavlis, K. Zoiros, et al. · Electronics Letters · 100

Band-population effects and intraband magneto-optical properties of a many-valley semiconductor: PbTe

1979 · H. Burkhard, G. Bauer, et al. · Physical review. B, Condensed matter · 68

Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine

1989 · G. Haacke, S. P. Watkins, et al. · Applied Physics Letters · 63

Refractive indices of InAlAs and InGaAs/InP from 250 to 1900 nm determined by spectroscopic ellipsometry

1992 · H.W. Dinges, H. Burkhard, et al. · Applied Surface Science · 54

Non-equilibrium behaviour of the two-dimensional electron gas in the quantized Hall resistance regime of GaAs/Al0.3Ga0.7As

1984 · F. Kuchar, G. Bauer, et al. · Surface Science · 49

Epitaxial growth of high-mobility GaAs using tertiarybutylarsine and triethylgallium

1990 · G. Haacke, S. P. Watkins, et al. · Applied Physics Letters · 46

All-optical XOR in a semiconductor optical amplifier-assisted fiber Sagnac gate

1999 · T. Houbavlis, K. Zoiros, et al. · IEEE Photonics Technology Letters · 44

10-Gb/s standard fiber transmission using directly modulated 1.55-μm quantum-well DFB lasers

1995 · S. Mohrdiek, H. Burkhard, et al. · IEEE Photonics Technology Letters · 44

Submillimeter spectroscopy of TO-phonon mode softening in PbTe

1977 · H. Burkhard, G. Bauer, et al. · Journal of the Optical Society of America · 41

Measurements of line strengths in the hydroperoxy .nu.1 overtone band at 1.5 .mu.m using an indium gallium arsenide phosphide laser

1991 · T. J. Johnson, F. G. Wienhold, et al. · The Journal of Physical Chemistry · 39

Static and dynamic properties of InGaAsP-InP distributed feedback lasers-a detailed comparison between experiment and theory

1994 · S. Hansmann, H. Walter, et al. · IEEE Journal of Quantum Electronics · 36

Impurity and vacancy states in PbTe

1976 · G. Bauer, H. Burkhard, et al. · Journal of Applied Physics · 36

Tailored DFB laser properties by individually chirped gratings using bent waveguides

1995 · H. Hillmer, A. Grabmaier, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 31

Arsine Adsorption on Activated Carbon

1988 · G. Haacke, J. S. Brinen, et al. · Journal of The Electrochemical Society · 29

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Variation of coupling coefficients by sampled gratings in complex coupled distributed-feedback lasers

1995 · S. Hansmann, H. Hillmer, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 28

Far-infrared reflectivity of PbTe films on NaCl substrates

1976 · H. Burkhard, G. Bauer, et al. · Solid State Communications · 25

Lattice Vibrations and Free Carrier Dispersion in PbSe

1974 · H. Burkhard, R. Geick, et al. · physica status solidi (b) · 25

Polywater: Methods for Identifying Polywater Columns and Evidence for Ordered Growth

1970 · G. A. Castellion, D. G. Grabar, et al. · Science · 23

Resonant level in semiconducting Hg1−xCdxTe

1975 · R. Dornhaus, G. Nimtz, et al. · Solid State Communications · 22

Electron concentrations and mobilities in selectively doped AlGaAs-GaAs-AlGaAs double heterostructures

1986 · H. Burkhard, W. Schlapp, et al. · Surface Science · 21

InGaAsP/InP Mushroom Stripe Lasers with Low CW Threshold and High Output Power

1983 · H. Burkhard, E. Kuphal · Japanese Journal of Applied Physics · 21

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Three- and four-layer LPE InGaAs(P) mushroom stripe lasers for λ = 1.30, 1.54, and 1.66 µm

1985 · H. Burkhard, E. Kuphal · IEEE Journal of Quantum Electronics · 20

Laser diodes with integrated spot-size transformer as low-cost optical transmitter elements for telecommunications

1997 · B. Hubner, G. Vollrath, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 19

Works count: 140

Citation count: 1,673

H-index: 21

I10-index: 43