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Hai-Dang Trinh

Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
2012 · Binh-Tinh Tran, Edward-Yi Chang, et al. · Solar Energy Materials and Solar Cells · 44
High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
2011 · Shih-Hsuan Tang, Edward Yi Chang, et al. · Applied Physics Letters · 34
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Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
2010 · Hai-Dang Trinh, Edward Yi Chang, et al. · Japanese Journal of Applied Physics · 32
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Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In$_{0.5}$Ga$_{0.5}$As and In$_{0.3}$Ga$_{0.7}$As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
2012 · Hong-Quan Nguyen, Edward Yi Chang, et al. · Applied Physics Express · 21
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Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO$_{2}$ on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors
2012 · Hai-Dang Trinh, Yueh-Chin Lin, et al. · Applied Physics Express · 21
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Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors
2014 · Quang-Ho Luc, Edward Yi Chang, et al. · Japanese Journal of Applied Physics · 11
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Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density
2013 · Hai-Dang Trinh, Yueh-Chin Lin, et al. · Applied Physics Letters · 9
Effective surface treatment for GaN metal–insulator–semiconductor high-electron-mobility transistors using HF plus N 2 plasma prior to SiN passivation
2015 · Shih-Chien Liu, Hai-Dang Trinh, et al. · Japanese Journal of Applied Physics · 8
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Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations
2013 · Shih-Hsuan Tang, Chien-I Kuo, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 8
Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates
2012 · Yuen-Yee Wong, Wei-Ching Huang, et al. · Journal of Electronic Materials · 8
Growth of High-Quality In$_{0.4}$Ga$_{0.6}$N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
2011 · Binh-Tinh Tran, Edward-Yi Chang, et al. · Applied Physics Express · 8
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Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs
2012 · Hai-Dang Trinh, Yue-Chin Lin, et al. · IEEE International Conference on Semiconductor Electronics · 6
Investigation of Characteristics of Al2O3/n-In x Ga1−x As (x = 0.53, 0.7, and 1) Metal–Oxide–Semiconductor Structures
2013 · Hai-Dang Trinh, Yueh-Chin Lin, et al. · Journal of Electronic Materials · 2
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
2009 · Chia-Yuan Chang, Edward Yi Chang, et al. · ECS Transactions · 2
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al[sub 2]O[sub 3] Gate Dielectric
2009 · Chia-Yuan Chang, Heng-Tung Hsu, et al. · Electrochemical and Solid-State Letters · 2
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Inx Ga1−x As materials for post CMOS application: Materials and device aspects
2014 · Edward Yi Chang, Yueh-Chin Lin, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 1
High k/III-V structures: Interfaces, oxides quality and down scaling
2012 · Hai-Dang Trinh, Edward Yi Chang · IEEE International Conference on Solid-State and Integrated Circuit Technology · 1
Studying of InSb MOS capacitors for post CMOS application
2013 · Edward Yi Chang, Hai-Dang Trinh, et al. · Symposium on Microelectronics Technology and Devices
Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications
2013 · Edward Yi Chang, Hai-Dang Trinh, et al. · MRS Proceedings
The Growth of High Quality In0.4Ga0.6N Film on Si(111) Substrate without Phase Separation for Photovoltaic Device Applications
2011 · Binh-Tinh Tran, Edward Yi Chang, et al. · ECS Meeting Abstracts
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Reduction of Parallel Conduction at the Regrowth Interface of GaN Template Using Nitridation
2011 · Yuen-Yee Wong, Edward Yi Chang, et al. · ECS Meeting Abstracts
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InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
2009 · Chia-Yuan Chang, Edward Yi Chang, et al. · ECS Meeting Abstracts
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Works count: 22
Citation count: 218
H-index: 8
I10-index: 6
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