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Toshiro Yuasa

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy
1987 · A. Gomyo, T. Suzuki, et al. · Applied Physics Letters · 435
Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
1986 · A. Gomyo, K. Kobayashi, et al. · Journal of Crystal Growth · 235
Degradation of (AlGa)As DH lasers due to facet oxidation
1978 · T. Yuasa, M. Ogawa, et al. · Applied Physics Letters · 101
Raman scattering from coupled plasmon–LO-phonon modes inn-type Alx Ga1−x As
1986 · T. Yuasa, S. Naritsuka, et al. · Physical review. B, Condensed matter · 53
Influence of growth conditions and alloy composition on deep electron traps of n-AlxGa1−xAs grown by MBE
1984 · K. Yamanaka, S. Naritsuka, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 47
Mechanism of platinum-enhanced oxidation of silicon at low temperatures
1998 · Hikaru Kobayashi, Toshiro Yuasa, et al. · The Journal of Chemical Physics · 40
Composition dependence of photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy
1984 · M. Mihara, Y. Nomura, et al. · Journal of Applied Physics · 37
Mirror degradation in AlGaAs double-heterostructure lasers
1979 · H. Yonezu, K. Endo, et al. · Journal of Applied Physics · 36
Effects of postmetallization annealing on ultrathin SiO2 layer properties
2002 · Asuha, Toshiro Yuasa, et al. · Applied Physics Letters · 34
Low temperature catalytic formation of Si-based metal–oxide–semiconductor structure
1996 · Hikaru Kobayashi, Toshiro Yuasa, et al. · Journal of Applied Physics · 33
Continuous-wave high-power (75 mW) operation of a transverse-mode stabilised window-structure 680 nm AlGaInP visible laser diode
1990 · Y. Ueno, K. Endo, et al. · Electronics Letters · 32
Chemically enhanced focused ion beam etching of deep grooves and laser-mirror facets in GaAs under Cl2 gas irradiation using a fine nozzle
1987 · N. Takado, K. Asakawa, et al. · Applied Physics Letters · 32
Defect-related emissions in photoluminescence spectra of AlxGa1−xAs grown by molecular beam epitaxy
1984 · M. Mihara, Y. Nomura, et al. · Journal of Applied Physics · 23
Observation of plasmons coupled with optical phonons in n-AlxGa1−xAs by Raman scattering
1985 · T. Yuasa, S. Naritsuka, et al. · Applied Physics Letters · 16
Effect of chemical oxide layers on platinum-enhanced oxidation of silicon
1997 · K. Namba, T. Yuasa, et al. · Journal of Applied Physics · 13
Palladium-promoted oxidation of Si at low temperatures
1997 · H. Kobayashi, H. Kawa, et al. · Applied Surface Science · 11
Surface-emitting GaAs/AlGaAs lasers with dry-etched 45° total reflection mirrors
1989 · N. Hamao, M. Sugimoto, et al. · Applied Physics Letters · 11
Effect of Group V/III Flux Ratio on Lightly Si‐Doped Al x Ga1 − x As Grown by Molecular Beam Epitaxy
1984 · Y. Nomura, M. Mannoh, et al. · Journal of The Electrochemical Society · 11
830 nm high-power low-noise self-aligned AlGaAs/GaAs double-quantum-well lasers
1989 · S. Ishikawa, M. Nido, et al. · Electronics Letters · 8
High-power individually addressable monolithic laser diode array
1989 · M. Tsunekane, K. Endo, et al. · Electronics Letters · 7
High power and low optical feedback noise AlGaAs single quantum well lasers
1989 · M. Nido, K. Endo, et al. · Electronics Letters · 6
Small astigmatism, high power and low noise 0.78 µm self-aligned lasers
1989 · I. Komazaki, M. Uchida, et al. · Electronics Letters · 5
Pair-groove-substrate GaAs/AlGaAs multiquantum-well lasers with a self-aligned stripe geometry
1986 · T. Yamada, T. Yuasa, et al. · Electronics Letters · 3
High-power Individually Addressed Monolithic AlGaAs Laser Diode Arrays For Optical Disc Memories
2005 · M. Tsunekane, S. Ishikawa, et al. · IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS) · 1
Improvement of electrical characteristics of silicon oxynitride layers by a platinum method
2002 · Toshiko Mizokuro, Masafumi Tamura, et al. · Applied Surface Science · 1
Works count: 36
Citation count: 1,233
H-index: 14
I10-index: 18
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