Author

Osamu Igarashi

Observed names: OSAMU IGARASHI, Osamu Igarashi Osamu Igarashi

Observed institution: Ulvac (Japan)

OpenAlex ID: A5110179460

Crystallographic Orientations and Interfacial Mismatches of Single-Crystal CdS Films Deposited on Various Faces of Zinc-Blende-Type Materials

1971 · Osamu Igarashi · Journal of Applied Physics · 50

Epitaxial growth of CuInSe2 single crystal by halogen transport method

1993 · Osamu Igarashi · Journal of Crystal Growth · 41

Heteroepitaxial Growth of GaP on Si Substrates by Evaporation Method

1970 · Osamu Igarashi · Journal of Applied Physics · 30

Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy

1978 · Shun-ichi Gonda, Yuichi Matsushima, et al. · Japanese Journal of Applied Physics · 27

Growth Hillocks and Crystal Structures in Heteroepitaxial CdS Deposited on GaAs

1969 · Osamu Igarashi · Japanese Journal of Applied Physics · 27

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Sharp Optical Emission from CuInSe2 Thin Films Grown by Molecular Beam Epitaxy

1994 · Shigeru Niki, Yunosuke Makita, et al. · Japanese Journal of Applied Physics · 26

Epitaxial Growth of CuGaS2 by Halogen Transport Method

1992 · Osamu Igarashi Osamu Igarashi · Japanese Journal of Applied Physics · 26

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Heteroepitaxial Growth of GaN1-xPx (x≲0.09) on Sapphire Substrates

1992 · Osamu Igarashi Osamu Igarashi · Japanese Journal of Applied Physics · 18

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Epitaxial Growth of InN by Halogen Transport Method

1992 · Osamu Igarashi Osamu Igarashi · Japanese Journal of Applied Physics · 16

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Heteroepitaxial Growth of GaN1-xPx(x\lesssim0.06) on Sapphire Substrates

1988 · Osamu Igarashi · Japanese Journal of Applied Physics · 13

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Measurement of Misalignments between the [111] Axes of GaP Deposits and Si Substrates by the X-Ray Divergent Beam Method

1976 · Osamu Igarashi · Japanese Journal of Applied Physics · 13

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Molecular Beam Epitaxial Growth and Properties of CuInSe2

1993 · Shigeru Niki, Yunosuke Makita, et al. · Japanese Journal of Applied Physics · 12

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Epitaxial growth of CuGaSe2 and CuInSe2 single crystals by halogen transport method using Se(CH3)2

1994 · Osamu Igarashi · Journal of Crystal Growth · 11

Epitaxial Growth of GaN1-xPx (x \lesssim0.04) on Sapphire Substrates

1985 · Osamu Igarashi, Yasumasa Okada · Japanese Journal of Applied Physics · 11

Selective Growth of Heteroepitaxial GaP on Si Substrates

1972 · Osamu Igarashi · Journal of The Electrochemical Society · 10

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Photoluminescence properties of CuInSe2 grown by molecular beam epitaxy

1994 · Shigeru Niki, Yunosuke Makita, et al. · Solar Energy Materials and Solar Cells · 8

Two-Stage Epitaxial Growth of GaP on Si

1977 · Osamu Igarashi · Japanese Journal of Applied Physics · 5

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Epitaxial growth of hexagonal and cubic CdS on and 2° off-oriented ()GaAs and CuInSe2, and misalignment between []CdS and []GaAs axes

1998 · Osamu Igarashi · Journal of Crystal Growth · 4

Epitaxial Growth of Mo Single Crystal on Sapphire by H2 Reduction of MoO3 and Characterization by Reflection High-Energy Electron Diffraction

1995 · Osamu Igarashi Osamu Igarashi · Japanese Journal of Applied Physics · 4

Correlation of reflection electron diffraction patterns, Raman spectra and compositions in “CuInSe2” films

1997 · Osamu Igarashi · Journal of Crystal Growth · 1

(112)-Oriented Growth of CuInSe2 on (001) Mo Single-Crystal Substrates

1995 · Osamu Igarashi Osamu Igarashi · Japanese Journal of Applied Physics · 1

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The Crystallographic Structure of the Star-Like Growth Hillocks in CdS Deposited on the (111)B Face of GaAs

1976 · Osamu Igarashi · Japanese Journal of Applied Physics · 1

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Crystal growth and physical properties of chalcopyrite and related materials

1997 · H. Ōyanagi, Shigeru Niki, et al.

Effects of Substrate Misorientation on Heteroepitaxial Growth of GaP on Si

1977 · Osamu Igarashi · Japanese Journal of Applied Physics

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ChemInform Abstract: SELEKTIVES WACHSTUM VON HETEROEPITAKTISCHEM GAP AUF SI‐SUBSTRATEN

1972 · OSAMU IGARASHI · ChemInform

Works count: 25

Citation count: 355

H-index: 12

I10-index: 15