Author

Yoocheol Shin

Observed name: Yoo-Cheol Shin

Observed institutions: Samsung (South Korea), Samsung Electronics (South Korea)

OpenAlex ID: A5110261663

A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs

2006 · Yoocheol Shin, Jungdal Choi, et al. · 57

Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

2007 · Changseok Kang, Jungdal Choi, et al. · IEEE International Reliability Physics Symposium proceedings · 47

Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory

2006 · Jang-Sik Lee, Chang-Seok Kang, et al. · Japanese Journal of Applied Physics · 33

Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory

2006 · Chang-Hyun Lee, Changseok Kang, et al. · 20

Analysis of Cell Current with Abnormal Channel Profile in 3D NAND Flash Memory

2024 · Jaewoo Lee, Yungjun Kim, et al. · JSTS Journal of Semiconductor Technology and Science · 13

The leakage current improvement in an ultrashallow junction NMOS with Co silicided source and drain

2000 · Woo-Tag Kang, Jeong-Seok Kim, et al. · IEEE Electron Device Letters · 10

Reliability Characteristics of TANOS (TaN/AlO/SiN/Oxide/Si)NAND Flash Memory with Rounded Corner (RC) Structure

2008 · Sung-Il Chang, Chang-Hyun Lee, et al. · 8

Self Aligned Trap-Shallow Trench Isolation Scheme for the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

2007 · Jae Sung Sim, Jintaek Park, et al. · 8

Analysis of Program Speed Characteristics Having Non-ideal Channel Profile in 3D NAND Flash Memory

2024 · Jaewoo Lee, Yungjun Kim, et al. · JSTS Journal of Semiconductor Technology and Science · 7

A New Cell-Type String Select Transistor in NAND Flash Memories for under 20nm Node

2012 · Do-Hyune Lee, Yoocheol Shin, et al. · IEEE International Memory Workshop (IMW) · 6

A 0.15 μm NAND flash technology with 0.11 μm/sup 2/ cell size for 1 Gbit flash memory

2002 · Jung-Dal Choi, Joon-Hee Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5

Charge Trapping Memory Cell of TANOS (Oxide-SiN-Al2O3-TaN) Structure Erased by Fowler-Nordheim Tunneling of Holes

2006 · Chang-Hyun Lee, Changseok Kang, et al. · MRS Proceedings · 1

Hole trap effect on time-dependent-dielectric breakdown (TDDB) of high-voltage peripheral nMOSFETs in flash memory application

2017 · Guangfan Jiao, Sungkweon Baek, et al. · IEEE International Reliability Physics Symposium proceedings

Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory

2007 · Jang-Sik Lee, Chang-Seok Kang, et al. · International Conference on Solid State Devices and Materials (SSDM)

A Novel NAND Flash Technology with Selective Epitaxial Growth Plug Structure for the Improvement in HV Transistor Breakdown Voltage

2007 · Sanghun Jeon, Changseok Kang, et al. · International Conference on Solid State Devices and Materials (SSDM)

Works count: 15

Citation count: 215

H-index: 8

I10-index: 6