Author

R. Venugopal

Observed name: R Venugopal

Institution: Texas Instruments (United States)

Observed institutions: Purdue University West Lafayette, University of Utah, Indira Gandhi Centre for Atomic Research, The Ohio State University, Texas Instruments (United States)

OpenAlex ID: A5111034875

Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches

2002 · R. Venugopal, Z. Ren, et al. · Journal of Applied Physics · 479

Two-dimensional quantum mechanical modeling of nanotransistors

2002 · A. Svizhenko, M. P. Anantram, et al. · Journal of Applied Physics · 458

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nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs

2003 · Zhibin Ren, R. Venugopal, et al. · IEEE Transactions on Electron Devices · 292

A simple quantum mechanical treatment of scattering in nanoscale transistors

2003 · R. Venugopal, M. Paulsson, et al. · Journal of Applied Physics · 176

The ballistic nanotransistor: a simulation study

2002 · Zhibin Ren, R. Venugopal, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 99

Discrete element analysis of tumbling mills

2000 · R.K. Rajamani, B.K. Mishra, et al. · Powder Technology · 93

Quantum mechanical analysis of channel access geometry and series resistance in nanoscale transistors

2003 · R. Venugopal, S. Goasguen, et al. · Journal of Applied Physics · 78

Phosphorus implantation into 4H-silicon carbide

2000 · M. A. Capano, R. Santhakumar, et al. · Journal of Electronic Materials · 76

3D simulation of charge motion in tumbling mills by the discrete element method

2001 · R Venugopal, R.K Rajamani · Powder Technology · 69

Design of a cellular manufacturing system: A syntactic pattern recognition approach

1986 · H.L. Wu, R. Venugopal, et al. · Journal of Manufacturing Systems · 59

Simulating quantum transport in nanoscale mosfets: ballistic hole transport, subband engineering and boundary conditions

2003 · R. Venugopal, Zhibin Ren, et al. · IEEE Transactions on Nanotechnology · 39

Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation

2002 · Z. Ren, R. Venugopal, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 39

Growth of crack-free hexagonal GaN films on Si(100)

2001 · J. Wan, R. Venugopal, et al. · Applied Physics Letters · 33

GaN epilayers grown on 100 mm diameter Si(111) substrates

2000 · H.M Liaw, R Venugopal, et al. · Solid-State Electronics · 33

Epitaxial GaN films grown on Si(1 1 1) with varied buffer layers

2001 · H.M. Liaw, R. Venugopal, et al. · Solid-State Electronics · 20

Acoustic barriers and observation of guided elastic waves in GaN-AlN structures by Brillouin scattering

2001 · M. Chirita, R. Sooryakumar, et al. · Physical review. B, Condensed matter · 16

Design of CMOS Transistors to Maximize Circuit FOM Using a Coupled Process and Mixed-Mode Simulation Methodology

2006 · R. Venugopal, S. Chakravarthi, et al. · IEEE Electron Device Letters · 15

Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates

2001 · H.M. Liaw, R. Venugopal, et al. · Solid-State Electronics · 9

Computational techniques for the nonequilibrium quantum field theory simulation of MOSFETs

2002 · D. Jovanovic, R. Venugopal · International Workshop on Computational Electronics · 7

Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition

2003 · R. Venugopal, J. Wan, et al. · Journal of Electronic Materials · 6

Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon

2000 · H.M. Liaw, R. Venugopal, et al. · Materials science forum · 5

Modeling transport in nanoscale silicon and molecular devices on parallel machines

2004 · S. Goasguen, R. Venugopal, et al. · IEEE Conference on Nanotechnology (IEEE NANO) · 3

Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates

2002 · R. Venugopal, H.M. Liaw, et al. · International Symposium on Compound Semiconductors (ISCS) · 1

Solid Modeling of Nanoscale Artifacts

2004 · Pratibha Rao, Mukul Sharma, et al. · TechConnect Briefs

Epitaxial GaN films on Si(111) with varied buffer layers

2002 · H.M. Liaw, R. Venugopal, et al. · International Symposium on Compound Semiconductors (ISCS)

Works count: 26

Citation count: 2,105

H-index: 16

I10-index: 17