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Yu Bin Park

Observed name: Yubin Park
ORCID: 0009-0000-1116-8739
Observed ORCID: 0009-0000-1116-8739
OpenAlex ID: A5111217535
Nanoscale Investigation of the Effect of Annealing Temperature on the Polarization Switching Dynamics of Hf0.5Zr0.5O2 Thin Films
2024 · Sang Won An, Seong Bin Bae, et al. · Advanced Materials Interfaces · 20
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On-device cryogenic quenching enables robust amorphous tellurium for threshold switching
2026 · Namwook Hur, Seunghwan Kim, et al. · Nature Communications · 4
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Revealing Switching Mechanisms and Design Strategies for Selector-Only Memory Devices through Integrated DFT-Stochastic Modeling
2025 · Dongmin Kim, Yoori Seo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 2
Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit
2026 · Yoori Seo, Dongmin Kim, et al. · Advanced Materials
Ultra-Low Drift (4 mV/dec.) and Excellent Write Endurance (> 3×10 10 ) in Heterostructure Te-Based Selector-Only Memory (SOM) with 2D WS 2 Interlayer
2026 · Jangseop Lee, Seungkwon Hwang, et al.
DFT-Informed Multiscale Modeling of Switching Mechanisms and Design Strategies for Selector-Only Memory Devices
2026 · Dongmin Kim, Yoori Seo, et al. · IEEE Transactions on Electron Devices
Effect of top electrode on interfacial layer formation and polarization switching kinetics in post-deposition annealed Hf0.5Zr0.5O2 capacitors
2026 · Yu Bin Park, Tae Hyun Jung, et al. · Current Applied Physics
Works count: 7
Citation count: 25
H-index: 2
I10-index: 1
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