Author

M. Kimura

Observed name: M Kimura

Institutions: NEC (Japan), Shizuoka University, Research Institute of Electronics, Shizuoka University

Observed institutions: NEC (Japan), Shizuoka University, Tohoku University, University of Victoria, Tohoku Gakuin University, Research Institute of Electrical Communication, Tohoku University, Research Institute of Electronics, Shizuoka University, Southern Illinois University Edwardsville

OpenAlex ID: A5111243813

Convective transport and interface kinetics in liquid phase epitaxy

1994 · M. Kimura, N. Djilali, et al. · Journal of Crystal Growth · 41

A solid-liquid diffusion model for growth and dissolution of ternary alloys by liquid phase epitaxy

1996 · M. Kimura, Z. Qin, et al. · Journal of Crystal Growth · 30

Layer growth in GaAs epitaxy

1986 · J. Nishizawa, M. Kimura · Journal of Crystal Growth · 26

Epitaxial film transfer technique for producing single crystal Si film on an insulating substrate

1983 · M. Kimura, K. Egami, et al. · Applied Physics Letters · 20

Bipolar-mode static induction transistor: experiment and two-dimensional analysis

1990 · C.-W. Kim, M. Kimura, et al. · IEEE Transactions on Electron Devices · 18

Novel LSI/SOI wafer fabrication using device layer transfer technique

1985 · T. Hamaguchi, E. Endo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16

The growth of ferroelectric single crystal Sr2Nb2O7 by means of the floating zone technique

1972 · M Takahashi, S Nanamatsu, et al. · Journal of Crystal Growth · 16

New probe microstructure for full-wafer, contact-probe cards

2003 · K. Soejima, M. Kimura, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 13

Convection model for growth and dissolution of ternary alloys by liquid phase epitaxy

1996 · Z. Qin, M. Kimura, et al. · Journal of Crystal Growth · 13

Microheater and microbolometer using microbridge of SiO 2 film on silicon

1981 · M. Kimura · Electronics Letters · 12

Fabrication of p-i-n photodiodes on LPE-grown substrates

1989 · T. Sukegawa, M. Kimura, et al. · IEEE Electron Device Letters · 11

A numerical analysis for the conversion phenomenon of GaAs to GaAsP on a GaP substrate in an LPE system

1996 · M. Kimura, S. Dost, et al. · Journal of Crystal Growth · 9

Liquid phase epitaxy of silicon: an experimental and numerical parametric study

1996 · M. Kimura, N. Djilali, et al. · Journal of Crystal Growth · 8

Two-Step Laser Recrystallization of Silicon Stripes in Sio2 Grooves for Crystallographic Orientation Control

1984 · K. Egami, M. Kimura, et al. · MRS Proceedings · 8

High Density Multilayer Substrate For Si On Si High Speed Module

2005 · M. Kimura, T. Shimoto, et al. · IEEE/CPMT International Electronics Manufacturing Technology Symposium · 6

Minority-carrier control gate turn-off thyristor

1989 · F. Sugawara, M. Kimura, et al. · IEEE Transactions on Electron Devices · 6

A model for convective mass transport in liquid phase epitaxial growth of semiconductors

1997 · S. Dost, Z. Qin, et al. · International Journal of Heat and Mass Transfer · 4

Crsslinking effect of ultrahigh molecular weight polyethylene-low molecular weight polyethylene blend films produced by gelation/crystallization from solutions

1991 · C. Sawatari, F. Ozaki, et al. · Colloid & Polymer Science · 4

Formation of zinc blende GaN using the conversion technique

1997 · T. Sukegawa, H. Katsuno, et al. · Applied Surface Science · 3

Rapid diffusion of V elements during the conversion of GaAs to GaAsP on a GaP substrate

1997 · M. Kimura, Z. Qin, et al. · Applied Surface Science · 3

Effects of the doping profile on current characteristics in BSITs

1992 · C.-W. Kim, M. Kimura, et al. · IEEE Electron Device Letters · 3

Conversion mechanism of GaAs to GaAsP on GaP substrate

1997 · M. Kimura, Z. Qin, et al. · Materials Science and Engineering B · 2

Fabrication technique of silicon power devices by liquid phase epitaxy

2005 · T. Sukegawa, M. Kimura, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 1

Gravity effect on dissolution and growth of GaSb by liquid-phase epitaxy

1997 · H. Kanai, M. Kimura, et al. · Journal of Crystal Growth · 1

Diffusion mass transport in liquid phase epitaxial growth of semiconductors

1996 · S. Dost, M. Kimura, et al. · International Communications in Heat and Mass Transfer · 1

Works count: 30

Citation count: 277

H-index: 11

I10-index: 11