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Ted F. Ciszek

Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration
2006 · T. Buonassisi, A. A. Istratov, et al. · Applied Physics Letters · 137
Preparation and characterization of some AIBIICV type semiconductors
1988 · R. Bacewicz, T. F. Ciszek · Applied Physics Letters · 116
Structural and electrical charaterization of crystallographic defects in silicon ribbons
1980 · K. Yang, G.H. Schwuttke, et al. · Journal of Crystal Growth · 74
Ion migration in chalcopyrite semiconductors
1992 · Geula Dagan, T. F. Ciszek, et al. · The Journal of Physical Chemistry · 71
Techniques for the crystal growth of silicon ingots and ribbons
1984 · T.F. Ciszek · Journal of Crystal Growth · 66
Edge-defined, film-fed growth (EFG) of silicon ribbons
1972 · T.F. Ciszek · Materials Research Bulletin · 65
Directionally solidified solar-grade silicon using carbon crucibles
1979 · T.F. Ciszek, G.H. Schwuttke, et al. · Journal of Crystal Growth · 44
Non-cylindrical growth habit of float zoned dislocation-free [111] silicon crystals
1971 · T.F. Ciszek · Journal of Crystal Growth · 44
Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation
1985 · T. F. Ciszek · Journal of The Electrochemical Society · 40
Isotope Effect in Superconducting YBa2Cu3O7-δ System
1987 · Hiroshi Katayama-Yoshida, Tsuguyoshi Hirooka, et al. · Japanese Journal of Applied Physics · 39
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Maximum growth rates for melt-grown ribbon-shaped crystals
1976 · T. F. Ciszek · Journal of Applied Physics · 37
A continuous Czochralski silicon crystal growth system
2003 · C. Wang, H. Zhang, et al. · Journal of Crystal Growth · 36
Crystal growth and superconducting phase formation from Bi-Ca-Sr-Cu-O liquids
1988 · T.F. Ciszek, J.P. Goral, et al. · Journal of Crystal Growth · 36
Some Effects of Crystal Growth Parameters on Minority Carrier Lifetime in Float‐Zoned Silicon
1989 · T. F. Ciszek, Tihu Wang, et al. · Journal of The Electrochemical Society · 35
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Growth and characterization of silicon ribbons produced by a capillary action shaping technique
1975 · T. F. Ciszek, G. H. Schwuttke · physica status solidi (a) · 35
Applications of synchrotron radiation X-ray techniques on the analysis of the behavior of transition metals in solar cells and single-crystalline silicon with extended defects
2003 · T Buonassisi, M Heuer, et al. · Physica B Condensed Matter · 31
Silicon defect and impurity studies using float-zone crystal growth as a tool
2002 · T.F. Ciszek, T.H. Wang · Journal of Crystal Growth · 31
Growth of silicon thin layers on cast MGSi from metal solutions for solar cells
1996 · T WANG, T CISZEK, et al. · Solar Energy Materials and Solar Cells · 29
Growth of YBa2Cu3O7-δ Single Crystals
1987 · Hiroshi Katayama-Yoshida, Yutaka Okabe, et al. · Japanese Journal of Applied Physics · 29
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Oxygen isotope effect in the superconducting Bi-Sr-Ca-Cu-O system
1988 · H. Katayama-Yoshida, T. Hirooka, et al. · Physica C Superconductivity · 27
Melt growth and some properties of CuxAg1−xInSe2 and CuInyGa1−ySe2 chalcopyrite solid solution crystals
1986 · T.F. Ciszek · Journal of Crystal Growth · 25
Factors influencing surface quality and impurity distribution in silicon ribbons grown by the capillary action shaping technique (CAST)
1980 · T.F. Ciszek, G.H. Schwuttke, et al. · Journal of Crystal Growth · 23
A new narrow-gap semiconductor LiCdAs
1988 · R. Bacewicz, T.F. Ciszek · Materials Research Bulletin · 21
Growth of Large-Grain Silicon Layers by Atmospheric Iodine Vapor Transport
2000 · T. H. Wang, T. F. Ciszek · Journal of The Electrochemical Society · 20
Filament Materials for Edge‐Supported Pulling of Silicon Sheet Crystals
1982 · T. F. Ciszek, J. L. Hurd, et al. · Journal of The Electrochemical Society · 19
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Works count: 176
Citation count: 1,717
H-index: 22
I10-index: 53
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