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Yoshinari Kamakura

Observed names: Y Kamakura, Y. Kamakura, Yoshinari KAMAKURA, Yoshinari Kamakura Yoshinari Kamakura
Observed institutions: Shizuoka University, Ritsumeikan University, Japan Science and Technology Agency, Toyota Technological Institute, Osaka Institute of Technology, The University of Osaka
OpenAlex ID: A5111430338
A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model
1994 · T. Kunikiyo, M. Takenaka, et al. · Journal of Applied Physics · 157
Methodology of Thermoelectric Power Factor Enhancement by Controlling Nanowire Interface
2018 · Takafumi Ishibe, Atsuki Tomeda, et al. · ACS Applied Materials & Interfaces · 118
Impact ionization model for full band Monte Carlo simulation
1994 · Y. Kamakura, H. Mizuno, et al. · Journal of Applied Physics · 111
Electron mobility calculation for graphene on substrates
2014 · Hideki Hirai, Hideaki Tsuchiya, et al. · Journal of Applied Physics · 108
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Theoretical performance estimation of silicene, germanene, and graphene nanoribbon field-effect transistors under ballistic transport
2014 · Shiro Kaneko, Hideaki Tsuchiya, et al. · Applied Physics Express · 90
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Modeling, Simulation, Fabrication, and Characterization of a 10- $\mu$ W/cm2 Class Si-Nanowire Thermoelectric Generator for IoT Applications
2018 · Motohiro Tomita, Shunsuke Oba, et al. · IEEE Transactions on Electron Devices · 73
A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
1994 · A. Abramo, L. Baudry, et al. · IEEE Transactions on Electron Devices · 70
A new soft breakdown model for thin thermal SiO/sub 2/ films under constant current stress
1999 · T. Tomita, H. Utsunomiya, et al. · IEEE Transactions on Electron Devices · 64
Equivalent transport models in atomistic quantum wires
2012 · Gennady Mil’nikov, Nobuya Mori, et al. · Physical Review B · 63
The Theoretical Highest Frame Rate of Silicon Image Sensors
2017 · Takeharu Etoh, Anh Nguyen, et al. · Sensors · 58
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Miniaturized planar Si-nanowire micro-thermoelectric generator using exuded thermal field for power generation
2018 · Tianzhuo Zhan, Ryo Yamato, et al. · Science and Technology of Advanced Materials · 52
A detailed study of soft- and pre-soft-breakdowns in small geometry MOS structures
2002 · T. Sakura, H. Utsunomiya, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 48
Monte Carlo simulations of electron transport properties of diamond in high electric fields using full band structure
2004 · Tomokatsu Watanabe, Tokuyuki Teraji, et al. · Journal of Applied Physics · 47
A new model of time evolution of gate leakage current after soft breakdown in ultra-thin gate oxides
2003 · T. Hosoi, P. Lo Re, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 43
Monte Carlo simulation of phonon transport in silicon including a realistic dispersion relation
2013 · K. Kukita, Y. Kamakura · Journal of Applied Physics · 42
Light-In-Flight Imaging by a Silicon Image Sensor: Toward the Theoretical Highest Frame Rate
2019 · Takeharu Etoh, Tomoo Okinaka, et al. · Sensors · 41
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$\sqrt{3} {\times} \sqrt{3} $ germanene on Al(111) grown at nearly room temperature
2017 · Satoshi Endo, Osamu Kubo, et al. · Applied Physics Express · 36
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R -matrix theory of quantum transport and recursive propagation method for device simulations
2008 · Gennady Mil’nikov, Nobuya Mori, et al. · Journal of Applied Physics · 31
Determination of threshold energy for hot electron interface state generation
2002 · J.D. Bude, T. Iizuka, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 29
Impact Excitation of Carriers in Diamond under Extremely High Electric Fields
2001 · Tomokatsu Watanabe, Masatake Irie, et al. · Japanese Journal of Applied Physics · 29
Boron segregation to extended defects induced by self-ion implantation into silicon
1999 · Jianxin Xia, Tomoya Saito, et al. · Journal of Applied Physics · 26
Computational Study of Effects of Surface Roughness and Impurity Scattering in Si Double-Gate Junctionless Transistors
2015 · Masato Ichii, Ryoma Ishida, et al. · IEEE Transactions on Electron Devices · 24
Hot hole induced breakdown of thin silicon dioxide films
1997 · Takayuki Tomita, Hiroto Utsunomiya, et al. · Applied Physics Letters · 24
Phonon drag effect on Seebeck coefficient of ultrathin P-doped Si-on-insulator layers
2014 · F. Salleh, T. Oda, et al. · Applied Physics Letters · 22
Verification of hot hole scattering rates in silicon by quantum-yield experiment
2000 · Yoshinari Kamakura, Ichiro Kawashima, et al. · Journal of Applied Physics · 22
Works count: 259
Citation count: 2,182
H-index: 23
I10-index: 51
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