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S. S. Pei
Observed names:
S. PEI,
S. Pei,
S. S. S. Pei,
S.-S. Pei,
S.S. Pei,
Shin-Shem Pei,
Shin-Shem Steven Pei,
Shin-shem Pei
show all 8
Observed institutions:
University of Akron,
AT&T (United States),
United States Naval Research Laboratory,
University of Houston,
Nokia (United States),
University of Missouri,
Texas A&M University
show all 7
OpenAlex ID:
A5111476732
High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
2013
·
Wei Wu
, Debtanu De
, et al.
·
Applied Physics Letters
·
264
PDF
Wafer-scale synthesis of graphene by chemical vapor deposition and its application in hydrogen sensing
2010
·
Wei Wu
, Zhihong Liu
, et al.
·
Sensors and Actuators B Chemical
·
261
Type-II interband quantum cascade laser at 3.8 µm
1997
·
Lin
, Yang
, et al.
·
Electronics Letters
·
165
Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors
1991
·
B. F. Levine
, S. D. Gunapala
, et al.
·
Applied Physics Letters
·
162
Origin of Antimony Segregation in GaInSb/InAs Strained-Layer Superlattices
2000
·
J. Steinshnider
, J. Harper
, et al.
·
Physical Review Letters
·
153
Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells
1998
·
J. R. Meyer
, C. L. Felix
, et al.
·
Applied Physics Letters
·
139
Control of thickness uniformity and grain size in graphene films for transparent conductive electrodes
2011
·
Wei Wu
, Qingkai Yu
, et al.
·
Nanotechnology
·
136
PDF
High power mid-infrared interband cascade lasers based on type-II quantum wells
1997
·
Rui Q. Yang
, B. H. Yang
, et al.
·
Applied Physics Letters
·
126
Near-room-temperature mid-infrared interband cascade laser
1998
·
L. J. Olafsen
, E. H. Aifer
, et al.
·
Applied Physics Letters
·
123
Batch fabrication and operation of GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arrays
1993
·
L.A. D'Asaro
, L.M.F. Chirovsky
, et al.
·
IEEE Journal of Quantum Electronics
·
91
Sum frequency generation study on the orientation of room-temperature ionic liquid at the graphene–ionic liquid interface
2011
·
Steven Baldelli
, Jiming Bao
, et al.
·
Chemical Physics Letters
·
84
Type II mid-infrared quantum well lasers
1996
·
J. I. Malin
, J. R. Meyer
, et al.
·
Applied Physics Letters
·
81
Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technology
1986
·
N.J. Shah
, Shin-Shem Pei
, et al.
·
IEEE Transactions on Electron Devices
·
73
Tetragonal tungsten oxide nanobelts synthesized by chemical vapor deposition
2010
·
Wei Wu
, Qingkai Yu
, et al.
·
Journal of Crystal Growth
·
68
Kinetic study of graphene growth: Temperature perspective on growth rate and film thickness by chemical vapor deposition
2013
·
Sirui Xing
, Wei Wu
, et al.
·
Chemical Physics Letters
·
63
Substrate Hybridization and Rippling of Graphene Evidenced by Near-Edge X-ray Absorption Fine Structure Spectroscopy
2010
·
Vincent Lee
, Chanro Park
, et al.
·
The Journal of Physical Chemistry Letters
·
60
Mechanism of Horizontally Aligned Growth of Single-Wall Carbon Nanotubes on R-Plane Sapphire
2006
·
Qingkai Yu
, Guoting Qin
, et al.
·
The Journal of Physical Chemistry B
·
59
Interband cascade light emitting diodes in the 5–8 μm spectrum region
1997
·
Rui Q. Yang
, Chih-Hsiang Lin
, et al.
·
Applied Physics Letters
·
59
Resonance Raman spectroscopy of G-line and folded phonons in twisted bilayer graphene with large rotation angles
2013
·
Yanan Wang
, Zhihua Su
, et al.
·
Applied Physics Letters
·
58
PDF
Role of internal loss in limiting type-II mid-IR laser performance
1998
·
W. W. Bewley
, I. Vurgaftman
, et al.
·
Journal of Applied Physics
·
53
Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit
1992
·
T.K. Woodward
, L.M.F. Chirovsky
, et al.
·
IEEE Photonics Technology Letters
·
52
Type II W, interband cascade and vertical-cavity surface-emitting mid-IR lasers
1998
·
J.R. Meyer
, D. Zhang
, et al.
·
IEE Proceedings - Optoelectronics
·
37
Microstructure of the GaSb-on-InAs heterojunction examined with cross-sectional scanning tunneling microscopy
1998
·
J. Harper
, M. Weimer
, et al.
·
Applied Physics Letters
·
36
Low-loss high-efficiency and high-power diode-pumped mid-infrared GaInSb/InAs quantum well lasers
1998
·
H. Q. Le
, C. H. Lin
, et al.
·
Applied Physics Letters
·
35
Sum Frequency Generation Spectroscopy Study of an Ionic Liquid at a Graphene-BaF2 (111) Interface
2014
·
Siyun Xu
, Sirui Xing
, et al.
·
The Journal of Physical Chemistry B
·
34
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Works count:
100
Citation count:
2,912
H-index:
28
I10-index:
41
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