Author

K.-K. Law

Observed names: K K Law, K-K. Law, K. -K. Law, K. K. Law, K.-K Law, K.K. Law, Kwok-Keung Law

Institution: Naval Air Warfare Center Weapons Division

Observed institutions: Northwestern University, Johns Hopkins University, University of California, Santa Barbara, Technion – Israel Institute of Technology, Naval Air Warfare Center Weapons Division, University of California System

OpenAlex ID: A5111489475

Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers

1994 · S. Y. Hu, S. W. Corzine, et al. · Journal of Applied Physics · 81

Self-electro-optic device based on a superlattice asymmetric Fabry–Perot modulator with an on/off ratio ≳100:1

1990 · K-K. Law, R. H. Yan, et al. · Applied Physics Letters · 79

Normally-off high-contrast asymmetric Fabry–Perot reflection modulator using Wannier–Stark localization in a superlattice

1990 · K-K. Law, R. H. Yan, et al. · Applied Physics Letters · 58

Characterization of recombination processes in multiple narrow asymmetric coupled quantum wells based on the dependence of photoluminescence on laser intensity

1992 · Y. J. Ding, C. L. Guo, et al. · Applied Physics Letters · 46

Simultaneous achievement of low insertion loss, high contrast and low operating voltage in asymmetric Fabry-Perot reflection modulator

1991 · K.-K. Law, M. Whitehead, et al. · Electronics Letters · 42

Electric-field-induced absorption changes in triangular quantum wells grown by pulsed-beam molecular-beam-epitaxy technique

1990 · K-K. Law, R. H. Yan, et al. · Journal of Applied Physics · 35

Continuous-wave photoluminescence excitation spectra of multiple narrow-stepped quantum wells: Evidence for saturation of interface traps

1992 · Y. J. Ding, C. L. Guo, et al. · Applied Physics Letters · 30

Superlattice surface-normal asymmetric Fabry-Perot reflection modulators: optical modulation and switching

1993 · K.-K. Law, J.L. Mertz, et al. · IEEE Journal of Quantum Electronics · 23

Temperature-dependent threshold and modulation characteristics in InGaAs/GaAs quantum-well ridge-waveguide lasers

1995 · S. Y. Hu, S. W. Corzine, et al. · Applied Physics Letters · 22

K-band operation of asymmetric Fabry-Perot modulators

1992 · C.C. Barron, M. Whitehead, et al. · IEEE Photonics Technology Letters · 22

Effect of layer thickness variations on the performance of asymmetric Fabry–Perot reflection modulators

1992 · K-K. Law, J. L. Merz, et al. · Journal of Applied Physics · 21

Analysis and optimization of graded-index separate-confinement heterostructure waveguides for quantum well lasers

1991 · W. X. Zou, Z. M. Chuang, et al. · Journal of Applied Physics · 21

1.0-mA-threshold uncoated lasers by impurity-induced disordering

1993 · W.X. Zou, T. Bowen, et al. · IEEE Photonics Technology Letters · 17

Low-threshold high-efficiency high-yield impurity-induced layer disordering laser by self-aligned Si-Zn diffusion

1990 · W. X. Zou, K-K. Law, et al. · Applied Physics Letters · 17

Optically addressed spatial light modulators by MBE-grown nipi MQW structures

1989 · Joseph Maserjian, P. O. Andersson, et al. · Applied Optics · 17

Fabrication of low-threshold InGaAs/GaAs ridge waveguide lasers by using in situ monitored reactive ion etching

1991 · C.P. Chao, S.Y. Hu, et al. · IEEE Photonics Technology Letters · 16

Low-threshold InGaAs/GaAs strained-layer ridge waveguide surface emitting lasers with two 45° angle etched internal total reflection mirrors

1991 · Chih-Ping Chao, Kwok-Keung Law, et al. · Applied Physics Letters · 14

Low-voltage superlattice asymmetric Fabry-Perot reflection modulator

1991 · K.-K. Law, L.A. Coldren, et al. · IEEE Photonics Technology Letters · 14

Laterally injected low-threshold lasers by impurity-induced disordering

1991 · W. X. Zou, K.-K. Law, et al. · Applied Physics Letters · 13

Observation of anomalously large blue shift of the heavy-hole photocurrent peak and optical bistability in narrow asymmetric coupled quantum wells

1991 · Y. J. Ding, C. L. Guo, et al. · Applied Physics Letters · 13

Low-threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure

1991 · C. P. Chao, S. Y. Hu, et al. · Journal of Applied Physics · 13

Impact ionization of excitons and donors in Alx Ga1−x As/(n-type GaAs):Si quantum wells

1992 · H. Weman, G. M. Treacy, et al. · Physical review. B, Condensed matter · 11

Photoinduced intersubband absorption in barrier doped multi-quantum-wells

1990 · Y. Garini, M. Olszakier, et al. · Superlattices and Microstructures · 11

Optically controlled reflection modulator using GaAs–AlGaAs n-i-p-i/multiple-quantum-well structures

1989 · K.-K. Law, J. Maserjian, et al. · Optics Letters · 11

Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks

1992 · R. Kalish, L.-Y. Kramer, et al. · Applied Physics Letters · 10

Works count: 78

Citation count: 754

H-index: 16

I10-index: 25