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William B. Ray

Observed names: W. B. Ray, W. Ray, William B Ray, William B. Ray II, William Ii B Ray, William Ray
OpenAlex ID: A5111506348
Failure Analysis of 1200-V/150-A SiC MOSFET Under Repetitive Pulsed Overcurrent Conditions
2015 · James A. Schrock, Bejoy N. Pushpakaran, et al. · IEEE Transactions on Power Electronics · 103
Low light illumination study on commercially available homojunction photovoltaic cells
2017 · Johnny Russo, William Ray, et al. · Applied Energy · 63
A radioluminescent nuclear battery using volumetric configuration: 63Ni solution/ZnS:Cu,Al/InGaP
2017 · Johnny Russo, Marc Litz, et al. · Applied Radiation and Isotopes · 45
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High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions
2014 · James A. Schrock, William B. Ray II, et al. · IEEE Transactions on Power Electronics · 43
Development of tritiated nitroxide for nuclear battery
2017 · Johnny Russo, Marc Litz, et al. · Applied Radiation and Isotopes · 23
Failure Modes of 15 kV SiC SGTO Thyristors during Repetitive Extreme Pulsed Overcurrent Conditions
2016 · James A. Schrock, Emily A. Hirsch, et al. · IEEE Transactions on Power Electronics · 23
Analysis of GaN power MOSFET exporsure to pulsed overcurrents
2015 · William B. Ray, James A. Schrock, et al. · IEEE International Pulsed Power Conference (PPC) · 14
High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications
2013 · Lin Cheng, Anant K. Agarwal, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 11
Analysis on repetitive pulsed overcurrent operation of GaN power transistors
2016 · William B. Ray, Matthew Kim, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 10
Demonstration of a Tritiated Nitroxide Nuclear Battery
2018 · Johnny Russo, Marc Litz, et al. · Applied Radiation and Isotopes · 9
Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests
2015 · Argenis V. Bilbao, James A. Schrock, et al. · IEEE International Pulsed Power Conference (PPC) · 9
Extraction of Safe Operating Area and long term reliability of experimental Silicon Carbide Super Gate Turn Off Thyristors
2015 · S. Lacouture, J. A. Schrock, et al. · IEEE International Pulsed Power Conference (PPC) · 7
Design of Alpha Voltaic Power Source Using Americium 241 (241Am) and Diamond with a Power Density of 10 mW/cm3
2017 · J. B. Langley, Marc Litz, et al. · 6
Low Illumination Light (LIL) Solar Cells: Indoor and Monochromatic Light Harvesting
2015 · Johnny A. Russo, William Ray, et al. · Defense Technical Information Center (DTIC) · 5
Modeling and Simulation of a Gallium Nitride (GaN) Betavoltaic Energy Converter
2016 · William Ii B Ray, Marc S. Litz, et al. · 4
Development of secondary breakdown circuit for DV/DT analysis of SIC devices
2015 · J. A. Schrock, W. B. Ray, et al. · IEEE International Pulsed Power Conference (PPC) · 4
Simulation and design trade-off analysis of 15 kV SiC SGTO thyristor during extreme pulsed overcurrent conditions
2016 · James A. Schrock, Emily A. Hirsch, et al. · IEEE International Power Modulator Symposium and High-Voltage Workshop (IPMHVC) · 3
Continuous switching of ultra-high voltage silicon carbide MOSFETs
2016 · Argenis V. Bilbao, James A. Schrock, et al. · IEEE International Power Modulator Symposium and High-Voltage Workshop (IPMHVC) · 3
Development and testing of an active high voltage saturation probe for characterization of ultra-high voltage silicon carbide semiconductor devices
2015 · Argenis V. Bilbao, James A. Schrock, et al. · Review of Scientific Instruments · 3
Ruggedness evaluation of 56mm2, 180 A SiC DMOSFETs as a function of pulse repetition rate for high power applications
2014 · K. Lawson, J. Schrock, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3
Analysis of Commercial GaN HEMTs in Overcurrent Operation
2018 · Matthew Kim, Jose A. Rodriguez, et al. · IEEE International Power Modulator Symposium and High-Voltage Workshop (IPMHVC) · 2
Planar Homojunction Gallium Nitride (GaN) P-i-N Device Evaluated for Betavoltaic Energy Conversion: Measurement and Analysis
2016 · Marc Litz, William B. Ray, et al. · 2
Economic analysis of battery energy storage system
2015 · William B. Ray, Anitha S. Subburaj, et al. · IEEE Industry Applications Society Annual Meeting (IAS) · 2
Comparison study of the controllers for grid connected battery system
2014 · Anitha Sarah Subburaj, William B Ray, et al. · 2
Modular Marx generator for dV/dt testing of power semiconductor devices
2014 · William B. Ray, James A. Schrock, et al. · IEEE International Power Modulator Symposium and High-Voltage Workshop (IPMHVC) · 2
Works count: 30
Citation count: 404
H-index: 9
I10-index: 9
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