Author

S. Sugou

Observed names: S Sugou, SUGOU, SHIGEO, Shigeo SUGOU, Shigeo Sugou, Shigeo Sugou Shigeo Sugou

Observed institutions: Tokyo Institute of Technology, NEC (Japan), University of Tsukuba, St Petersburg University, St. Petersburg Department of Steklov Institute of Mathematics, Steklov Mathematical Institute, Japan Science and Technology Agency

OpenAlex ID: A5111533102

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

1999 · Kenichi Nishi, Hideaki Saito, et al. · Applied Physics Letters · 593

Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

1996 · Hideaki Saito, Kenichi Nishi, et al. · Applied Physics Letters · 230

Low chirp observed in directly modulated quantum dot lasers

2000 · H. Saito, K. Nishi, et al. · IEEE Photonics Technology Letters · 179

Shape transition of InAs quantum dots by growth at high temperature

1999 · Hideaki Saito, Kenichi Nishi, et al. · Applied Physics Letters · 179

Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission

1998 · Hideaki Saito, Kenichi Nishi, et al. · Applied Physics Letters · 174

GaAsSb: A novel material for 1.3 µm VCSELs

1998 · T. Anan, K. Nishi, et al. · Electronics Letters · 90

Controlling polarization of quantum-dot surface-emitting lasers by using structurally anisotropic self-assembled quantum dots

1997 · Hideaki Saito, Kenichi Nishi, et al. · Applied Physics Letters · 83

Optical anisotropy in self-assembled InP quantum dots

1999 · Mitsuru Sugisaki, Hong-Wen Ren, et al. · Physical review. B, Condensed matter · 80

Zero-field spin quantum beats in charged quantum dots

2002 · I. E. Kozin, V. G. Davydov, et al. · Physical review. B, Condensed matter · 63

Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy

1993 · Takayoshi Anan, Shigeo Sugou, et al. · Applied Physics Letters · 62

Continuous-wave operation of 1.30 µm GaAsSb/GaAsVCSELs

2001 · T. Anan, M. Yamada, et al. · Electronics Letters · 61

Room temperature low-threshold CW operationof 1.23 µm GaAsSb VCSELs on GaAs substrates

2000 · M. Yamada, T. Anan, et al. · Electronics Letters · 61

Long-wavelength lasing from InAs self-assembled quantum dots on (311) B InP

1998 · Kenichi Nishi, Mitsuki Yamada, et al. · Applied Physics Letters · 55

Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric current

1999 · Ivan V. Ignatiev, Igor E. Kozin, et al. · Physical review. B, Condensed matter · 51

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High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product

1993 · I. Watanabe, S. Sugou, et al. · IEEE Photonics Technology Letters · 51

Room-temperature pulsed operation of GaAsSb/GaAsvertical-cavity surface-emitting lasers

1999 · T. Anan, M. Yamada, et al. · Electronics Letters · 48

Spontaneous lateral alignment of In0.25Ga0.75As self-assembled quantum dots on (311)B GaAs grown by gas source molecular beam epitaxy

1997 · Kenichi Nishi, Takayoshi Anan, et al. · Applied Physics Letters · 44

Low-threshold operation of 1.3-/spl mu/m GaAsSb quantum-well lasers directly grown on GaAs substrates

2000 · M. Yamada, T. Anan, et al. · IEEE Photonics Technology Letters · 43

Carrier relaxation dynamics in InP quantum dots studied by artificial control of nonradiative losses

2000 · Ivan V. Ignatiev, Igor E. Kozin, et al. · Physical review. B, Condensed matter · 42

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Analysis of leakage current in buried heterostructure lasers with semiinsulating blocking layers

1989 · S. Asada, S. Sugou, et al. · IEEE Journal of Quantum Electronics · 42

Fine structure and spin quantum beats in InP quantum dots in a magnetic field

2002 · I. A. Yugova, I. Ya. Gerlovin, et al. · Physical review. B, Condensed matter · 41

Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field

2001 · Ivan V. Ignatiev, Igor E. Kozin, et al. · Physical review. B, Condensed matter · 41

Low-threshold lasing from high-density InAs quantumdots of uniform size

1999 · H. Saito, K. Nishi, et al. · Electronics Letters · 39

Conditions for OMVPE Growth of GaInAsP/InP Crystal

1984 · Shigeo Sugou, Atsuhi Kameyama, et al. · Japanese Journal of Applied Physics · 36

High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide lasers

1999 · M. Yamada, T. Anan, et al. · IEEE Photonics Technology Letters · 29

Works count: 134

Citation count: 3,136

H-index: 28

I10-index: 57