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Bruce E. White

Observed names: B. E. White, B. E. White Jr., B. E. White, Jr., B.E White, B.E White, Jr., B.E. White, White, B. E., White., B. E.
Observed institutions: Binghamton University, Motorola (United States), Trinity College Dublin, Cornell University, Yale University, Massachusetts Institute of Technology, Drexel University
OpenAlex ID: A5111548419
Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
2004 · C.C. Hobbs, L.R.C. Fonseca, et al. · IEEE Transactions on Electron Devices · 227
Contributions to the effective work function of platinum on hafnium dioxide
2004 · J. K. Schaeffer, L. R. C. Fonseca, et al. · Applied Physics Letters · 199
Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II
2004 · C.C. Hobbs, L.R.C. Fonseca, et al. · IEEE Transactions on Electron Devices · 174
Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]
2004 · D. Triyoso, R. Liu, et al. · Journal of The Electrochemical Society · 169
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Amorphous Solid without Low Energy Excitations
1997 · Xiao Liu, B. E. White, Jr., et al. · Physical Review Letters · 163
Origin of the Bipolar Doping Behavior of SnO from X-ray Spectroscopy and Density Functional Theory
2013 · N. F. Quackenbush, J. P. Allen, et al. · Chemistry of Materials · 156
Hafnium zirconate gate dielectric for advanced gate stack applications
2007 · R. I. Hegde, D. H. Triyoso, et al. · Journal of Applied Physics · 103
Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics
2002 · J. K. Schaeffer, S. B. Samavedam, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 100
CMOS Vertical Multiple Independent Gate Field Effect Transistor (MIGFET)
2005 · L. Mathew, Y. Du, et al. · IEEE International SOI Conference (SOI) · 86
Silicon nanocrystal based memory devices for NVM and DRAM applications
2004 · R.A Rao, R.F Steimle, et al. · Solid-State Electronics · 85
Impact of Zr addition on properties of atomic layer deposited HfO2
2006 · D. H. Triyoso, R. I. Hegde, et al. · Applied Physics Letters · 83
Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen
2014 · S. Sallis, K. T. Butler, et al. · Applied Physics Letters · 81
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Internal Friction of Subnanometer a -Si O2 Films
1995 · B. E. White, R. O. Pohl · Physical Review Letters · 80
Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition
2005 · D. H. Triyoso, R. I. Hegde, et al. · Journal of Applied Physics · 79
Challenges for the integration of metal gate electrodes
2005 · J.K. Schaeffer, C. Capasso, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 71
Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
2004 · D. H. Triyoso, R. I. Hegde, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 69
Investigation of hydrogen induced changes in SrBi2Ta2O9 ferroelectric films
1997 · Sufi Zafar, Vidya Kaushik, et al. · Journal of Applied Physics · 66
Low-temperature internal friction in metal films and in plastically deformed bulk aluminum
1999 · Xiao Liu, EunJoo Thompson, et al. · Physical review. B, Condensed matter · 65
A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory
2004 · R. Muralidhar, R.F. Steimle, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 64
Impact of film properties of atomic layer deposited HfO2 resulting from annealing with a TiN capping layer
2006 · D. H. Triyoso, P. J. Tobin, et al. · Applied Physics Letters · 55
Beyond the battery
2008 · Bruce E. White · Nature Nanotechnology · 49
Phonon wave-packet interference and phonon tunneling based energy transport across nanostructured thin films
2010 · Z. T. Tian, B. E. White, et al. · Applied Physics Letters · 48
Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition
2005 · D. H. Triyoso, R. I. Hegde, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 45
Lone-Pair Stabilization in Transparent Amorphous Tin Oxides: A Potential Route to p-Type Conduction Pathways
2016 · Matthew J. Wahila, Keith T. Butler, et al. · Chemistry of Materials · 43
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Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics
2007 · J. K. Schaeffer, C. Capasso, et al. · Journal of Applied Physics · 43
Works count: 103
Citation count: 3,283
H-index: 33
I10-index: 53
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