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T. Sengoku
Institution:
Tokyo Institute of Technology
Observed institution:
Tokyo Institute of Technology
OpenAlex ID:
A5111608869
High-density InAs quantum dots on GaNAs buffer layer
2008
·
R. Suzuki
, T. Miyamoto
, et al.
·
Journal of Crystal Growth
·
8
Photoluminescence characteristics of MOCVD grown-InAs quantum dots covered by GaInP layer
2009
·
R. Suzuki
, T. Miyamoto
, et al.
·
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
InAs QDs on thin GaP1−xNx buffer on GaP by MOCVD
2009
·
S. Tanabe
, R. Suzuki
, et al.
·
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
Multilayer 1.4 μm InAs quantum dots with thin spacer using GaNAs strain compensation layer
2008
·
R. Suzuki
, T. Miyamoto
, et al.
·
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
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Works count:
4
Citation count:
8
H-index:
1
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