Author

J. Curless

Observed names: J Curless, J. A. Curless, J.A Curless, J.A. Curless, Jay A. Curless, Jay Curless

Observed institution: Motorola (United States)

OpenAlex ID: A5111655464

Field effect transistors with SrTiO3 gate dielectric on Si

2000 · K. Eisenbeiser, J. M. Finder, et al. · Applied Physics Letters · 297

Organic light-emitting diodes with a bipolar transport layer

1999 · Vi-En Choong, Song Shi, et al. · Applied Physics Letters · 156

Optical properties of bulk and thin-film SrTiO3 on Si and Pt

2000 · Stefan Zollner, A. A. Demkov, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 123

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Epitaxial oxide thin films on Si(001)

2000 · Z. Yu, J. Ramdani, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 117

Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy

2000 · Z. Yu, J. Ramdani, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 74

Development of integrated heterostructures on silicon by MBE

2003 · Ravi Droopad, Zhiyi Yu, et al. · Journal of Crystal Growth · 72

Advances in heteroepitaxy of oxides on silicon

2004 · Z. Yu, Y. Liang, et al. · Thin Solid Films · 71

Effects of substrate misorientation on the properties of (Al, Ga)As grown by molecular beam epitaxy

1985 · R. K. Tsui, J. A. Curless, et al. · Journal of Applied Physics · 48

Bipolar transport organic light emitting diodes with enhanced reliability by LiF doping

2000 · Vi-En Choong, Song Shi, et al. · Applied Physics Letters · 43

Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy

2001 · R Droopad, Z Yu, et al. · Materials Science and Engineering B · 40

Properties of AlxGa1−xAs (xAl≂0.3) grown by molecular-beam epitaxy on misoriented substrates

1986 · R. K. Tsui, J. A. Curless, et al. · Journal of Applied Physics · 40