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Yi‐Jen Chan

Observed names: Chan, YI-JEN CHAN, YI-Jen Chan, Yi-Jen Chan, Yi-jen Chan
OpenAlex ID: A5111661838
Improved quality-factor of 0.18-/spl mu/m CMOS active inductor by a feedback resistance design
2002 · Chao-Chih Hsiao, Chin-Wei Kuo, et al. · IEEE Microwave and Wireless Components Letters · 120
Carrier Transport Mechanism in a Nanoparticle-Incorporated Organic Bistable Memory Device
2007 · Heng-Tien Lin, Zingway Pei, et al. · IEEE Electron Device Letters · 116
A 0.5–7.5 GHz Ultra Low-Voltage Low-Power Mixer Using Bulk-Injection Method by 0.18-$\mu$m CMOS Technology
2007 · Kung-Hao Liang, Hong-Yeh Chang, et al. · IEEE Microwave and Wireless Components Letters · 92
Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design
1999 · Feng-Tso Chien, Yi-Jen Chan · IEEE Journal of Solid-State Circuits · 88
A photonic crystal ring resonator formed by SOI nano-rods
2007 · Wei-Yu Chiu, Tai-Wei Huang, et al. · Optics Express · 75
Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations
1994 · Yi-Jen Chan, D. Pavlidis · IEEE Transactions on Electron Devices · 74
A New Linearization Technique for CMOS RF Mixer Using Third-Order Transconductance Cancellation
2008 · Kung-Hao Liang, Chi-Hsein Lin, et al. · IEEE Microwave and Wireless Components Letters · 67
Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature
2011 · Ming-Jiue Yu, Yung-Hui Yeh, et al. · IEEE Electron Device Letters · 56
A New Nonvolatile Bistable Polymer-Nanoparticle Memory Device
2007 · Heng-Tien Lin, Zingway Pei, et al. · IEEE Electron Device Letters · 43
Device linearity improvement by Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructure doped-channel FETs
1995 · Yi-Jen Chan, Ming-Ta Kang · IEEE Electron Device Letters · 43
Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication
2004 · Wen-Kai Wang, Po-Chen Lin, et al. · IEEE Electron Device Letters · 41
Analysis, design, and optimization of InGaP-GaAs HBT matched-impedance wide-band amplifiers with multiple feedback loops
2002 · Ming-Chou Chiang, Shey-Shi Lu, et al. · IEEE Journal of Solid-State Circuits · 41
Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching
2002 · Hsien-Chin Chiu, Shih-Cheng Yang, et al. · IEEE Electron Device Letters · 41
Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory
2008 · Chia-Chieh Chang, Zingway Pei, et al. · Applied Physics Letters · 38
Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0≤x≤0.25) doped-channel field-effect transistors (DCFET's)
1995 · Yi-Jen Chan, Ming-Ta Yang · IEEE Transactions on Electron Devices · 37
Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model
1998 · Yi-Jen Chan, Chia-Hung Huang, et al. · IEEE Transactions on Microwave Theory and Techniques · 36
Electrophoretic Displays Fabricated on Ultra-Slim Flexible Glass Substrates
2012 · Sean M. Garner, Mingqian He, et al. · Journal of Display Technology · 31
Performance Consideration of MOS and Junction Diodes for Varactor Application
2007 · Yi-Jen Chan, Chi-Feng Huang, et al. · IEEE Transactions on Electron Devices · 28
A UV-Erasable Stacked Diode-Switch Organic Nonvolatile Bistable Memory on Plastic Substrates
2009 · Heng-Tien Lin, Zingway Pei, et al. · IEEE Electron Device Letters · 24
Vertical organic triodes with a high current gain operated in saturation region
2006 · Chuan-Yi Yang, Tzu-Min Ou, et al. · Applied Physics Letters · 22
Enhanced power performance of enhancement-mode Al/sub 0.5/Ga/sub 0.5/As/In/sub 0.15/Ga/sub 0.85/As pHEMTs using a low-k BCB passivation
2002 · Hsien-Chin Chin, Ming-Jyh Hwu, et al. · IEEE Electron Device Letters · 22
2 Gbit/s transimpedance amplifier fabricated by0.35 µmCMOS technologies
2001 · Chin-Wei Kuo, Chao-Chih Hsiao, et al. · Electronics Letters · 21
AlGaAs/InGaAs heterostructure doped-channel FET's exhibiting good electrical performance at high temperatures
2001 · Hsien-Chin Chiu, Shih-Cheng Yang, et al. · IEEE Transactions on Electron Devices · 20
Modulation-doped In0.48Al0.52P/In0.2Ga0.8As field-effect transistors
1993 · Jenn-Ming Kuo, Yi-Jen Chan, et al. · Applied Physics Letters · 20
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BCB-bridged distributed wideband SPST switch using 0.25-/spl mu/m In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic HEMTs
2004 · Cheng-Kuo Lin, Wen-Kai Wang, et al. · IEEE Transactions on Electron Devices · 19
Works count: 181
Citation count: 1,785
H-index: 21
I10-index: 49
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