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Martin J. Aguilera

Observed names: M. Aguilera, Martin Aguilera
OpenAlex ID: A5111675328
600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates
2014 · Toshihide Kikkawa, Tsutomu Hosoda, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 48
Single-frequency DFB laser diodes at visible wavelengths grown with low temperature remote plasma chemical vapor deposition p-AlGaN
2023 · Ryan Anderson, Josh Brown, et al. · Gallium Nitride Materials and Devices · 6
First-generation VGA electroluminescent display for head-mounted applications
1996 · Martin J. Aguilera, Larry Arbuthnot, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6
34.1: 100‐MHZ Active‐Matrix Electroluminescent Displays
1998 · J. Hsu, F. L. Hsueh, et al. · SID Symposium Digest of Technical Papers · 3
0.7-in. 1280x1024 active-matrix electroluminescent display using a 12-μm pixel structure
1998 · Larry Arbuthnot, Fu-Lung Hsueh, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Works count: 5
Citation count: 64
H-index: 3
I10-index: 1
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