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Nobuaki Hatori

Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers
2004 · M. Sugawara, H. Ebe, et al. · Physical Review B · 237
Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1directly modulated lasers and 40 Gb s−1signal-regenerative amplifiers
2005 · M Sugawara, N Hatori, et al. · Journal of Physics D Applied Physics · 231
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Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb s-1and a new scheme of 3R regenerators
2002 · M Sugawara, T Akiyama, et al. · Measurement Science and Technology · 185
Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-µm P-Doped Quantum-Dot Lasers without Current Adjustments
2004 · Koji Otsubo, Nobuaki Hatori, et al. · Japanese Journal of Applied Physics · 177
A Hybrid Integrated Light Source on a Silicon Platform Using a Trident Spot-Size Converter
2014 · Nobuaki Hatori, Takanori Shimizu, et al. · Journal of Lightwave Technology · 145
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Record low-threshold index-guided InGaAs/GaAlAsvertical-cavitysurface-emitting laser with a native oxide confinement structure
1995 · Y. Hayashi, T. Mukaihara, et al. · Electronics Letters · 144
Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection
2005 · M. Sugawara, N. Hatori, et al. · Journal of Applied Physics · 141
Symmetric highly efficient (/spl sim/0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers
2002 · T. Akiyama, H. Kuwatsuka, et al. · IEEE Photonics Technology Letters · 122
First demonstration of high density optical interconnects integrated with lasers, optical modulators, and photodetectors on single silicon substrate
2011 · Yutaka Urino, Takanori Shimizu, et al. · Optics Express · 108
Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers
2005 · I. P. Marko, N. F. Massé, et al. · Applied Physics Letters · 102
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Photon lifetime dependence of modulation efficiency and K factor in 1.3μm self-assembled InAs∕GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth
2004 · Mitsuru Ishida, Nobuaki Hatori, et al. · Applied Physics Letters · 91
Polarization control of vertical-cavity surface emitting lasers using a birefringent metal/dielectric polarizer loaded on top distributed Bragg reflector
1995 · T. Mukaihara, N. Ohnoki, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 89
Pattern-effect-free semiconductor optical amplifier achieved using quantum dots
2002 · T. Akiyama, N. Hatori, et al. · Electronics Letters · 78
Demonstration of 125-Gbps optical interconnects integrated with lasers, optical splitters, optical modulators and photodetectors on a single silicon substrate
2012 · Yutaka Urino, Yoshiji Noguchi, et al. · Optics Express · 62
1.28μm lasing from stacked InAs∕GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition
2005 · Jun Tatebayashi, Nobuaki Hatori, et al. · Applied Physics Letters · 61
First Demonstration of Athermal Silicon Optical Interposers With Quantum Dot Lasers Operating up to 125 °C
2014 · Yutaka Urino, Nobuaki Hatori, et al. · Journal of Lightwave Technology · 60
Excess intensity noise originated from polarization fluctuation in vertical-cavity surface-emitting lasers
1995 · T. Mukaihara, N. Ohnoki, et al. · IEEE Photonics Technology Letters · 57
Pattern‐effect‐free amplification and cross‐gain modulation achieved by using ultrafast gain nonlinearity in quantum‐dot semiconductor optical amplifiers
2003 · Tomoyuki Akiyama, Nobuaki Hatori, et al. · physica status solidi (b) · 55
Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs [311] B substrate
1999 · N. Nishiyama, A. Mizutani, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 50
Lasing characteristics of low-threshold oxide confinement InGaAs-GaAlAs vertical-cavity surface-emitting lasers
1995 · Y. Hayashi, T. Mukaihara, et al. · IEEE Photonics Technology Letters · 48
High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection
2011 · Takanori Shimizu, Nobuaki Hatori, et al. · IEEE International Conference on Group IV Photonics (GFP) · 46
Room-temperature gain and differential gain characteristics of self-assembled InGaAs/GaAs quantum dots for 1.1–1.3 μm semiconductor lasers
2000 · Nobuaki Hatori, Mitsuru Sugawara, et al. · Applied Physics Letters · 46
Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemicalvapour deposition
2003 · J. Tatebayashi, N. Hatori, et al. · Electronics Letters · 45
In As ∕ Ga As self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots
2004 · Jun Tatebayashi, Yasuhiko Arakawa, et al. · Applied Physics Letters · 44
A hybrid silicon evanescent quantum dot laser
2016 · Bongyong Jang, Katsuaki Tanabe, et al. · Applied Physics Express · 40
Works count: 150
Citation count: 3,224
H-index: 32
I10-index: 48
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