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Mykhailo M. Sletov

Observed name: M. M. Sletov
OpenAlex ID: A5111716653
Structural and photoluminescent properties of TiN thin films
2014 · M. N. Solovan, V. V. Brus, et al. · Optics and Spectroscopy · 11
The nature of the green luminescence band in zinc selenide crystals
2007 · V. P. Makhniĭ, M. M. Sletov, et al. · Journal of Optical Technology · 11
Band structure and spatial charge distribution in AlxGa1−x N
2000 · V. G. Deibuk, A. V. Voznyi, et al. · Semiconductors · 10
Features of optical properties of AlxGa1−x N solid solutions
2002 · V. G. Deibuk, A. V. Voznyi, et al. · Semiconductors · 5
Preparation of ZnO heterolayers on zinc chalcogenide substrates
2007 · V. P. Makhnii, M. M. Sletov, et al. · Inorganic Materials · 3
Edge luminescence from zinc selenide doped with isovalent magnesium impurity
2001 · M. M. Sletov · Technical Physics Letters · 3
Green luminescence in diffusion-doped layers of zinc selenide
2004 · V. P. Makhniy, M. M. Sletov, et al. · Technical Physics · 2
Hole conduction in zinc selenide crystals doped with elements of group V from the vapor phase
2000 · V. P. Makhnii, M. M. Sletov, et al. · Technical Physics Letters · 2
Luminescence mechanisms of zinc oxide layers obtained by isovalent substitution
2009 · V. P. Makhniĭ, M. M. Sletov, et al. · Journal of Optical Technology · 1
Mechanisms of Defect Formation for ZnSe with Isovalent Oxygen Impurity
2007 · L. I. Arkhilyuk, V. P. Makhniy, et al. · Telecommunications and Radio Engineering · 1
Detectors of UV and x-ray irradiation on the base of metal-zinc selenide contact
2006 · Victor P. Makhniy, Volodymyr V. Mel'nyk, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Optical Properties of Zinc Selenide Produced by Isovalent Substitution
2003 · Ya. N. Barasyuk, V. P. Makhniy, et al. · Russian Physics Journal · 1
Role of intrinsic defects in the emission of UV radiation in gallium nitride
1998 · M. M. Sletov · OptSp · 1
Influence of an isovalent Cd impurity on photoluminescence of ZnSe crystals
1995 · M. M. Berezovskii, V. P. Makhnii, et al. · Journal of Applied Spectroscopy · 1
Luminescent properties of gallium nitride and gallium-aluminum nitride
1991 · A. V. Dobrynin, M. M. Sletov, et al. · Journal of Applied Spectroscopy · 1
Defect Formation Mechanisms for ZnSe with Isovalent Oxygen Impurity
2007 · L. I. Arkhilyuk, V. P. Makhniy, et al. · Telecommunications and Radio Engineering
Optical properties of cadmium sulfide with quantum-scale surface structure
2006 · Victor P. Makhniy, Volodymyr V. Mel'nyk, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Optoelectronic Properties of Tin-Doped Zinc Telluride
2006 · L. I. Arkhilyuk, V. I. Grivul, et al. · Telecommunications and Radio Engineering
Violet luminescence in α-ZnSe heterolayers
2003 · V. P. Makhni, M. M. Sletov, et al. · Technical Physics Letters
Optical properties of layers of cadmium selenide obtained by solid-phase substitution
2002 · V. P. Makhnii, M. M. Sletov, et al. · Journal of Optical Technology
High-temperature edge luminescence from cubic cadmium selenide layers
2000 · E. V. Makhnii, M. M. Sletov · Technical Physics Letters
Luminescence of zinc telluride layers prepared by technique of solid-phase substitution reactions
1999 · В. П. Махній, M. M. Sletov · Optics and Spectroscopy
Photoluminescence of the space charge region of metal-zinc selenide contacts
1998 · V. P. Makhnii, M. M. Sletov · Semiconductors
Works count: 23
Citation count: 54
H-index: 4
I10-index: 3
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