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Souichi Yoshida

Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy
2004 · Taketomo Sato, Isao Tamai, et al. · Applied Surface Science · 11
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Automotive power module technologies for high speed switching
2016 · Shinichiro Adachi, Souichi Yoshida, et al. · 9
Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates
2004 · Souichi Yoshida, Isao Tamai, et al. · Japanese Journal of Applied Physics · 9
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RC-IGBT power module for xEV powertrain with fast and accurate on-chip temperature sensor
2019 · Akihiro Osawa, Tomoya Nakayama, et al. · European Conference on Power Electronics and Applications · 6
Extended Power Rating of 1200V IGBT Module with 7G RCIGBT Chip Technologies
2016 · Misaki Takahashi, Daniel Hofmann, et al. · 4
Improvement of the I2t capability for xEV active short circuit protection by combination of RC-IGBT and Leadframe technologies
2018 · Keiichi Higuchi, Hayato Nakano, et al. · International Power Electronics Conference (IPEC) · 2
700 kVA/L power density IGBT module for xEV power train
2017 · Akihiro Osawa, Keiichi Higuchi, et al. · 1
High $\mathbf{I}^{2}\mathbf{t}$ reliable power modules with leadframe structure and RC-IGBT combination technologies
2018 · Ryo Maruyama, Hayato Nakano, et al. · European Conference on Power Electronics and Applications
Formation of GaAs Quantum Wire Networks on (111)B patterned substrates using MBE Selective Growth
2004 · Souichi Yoshida, Isao Tamai, et al. · Technical report of IEICE. SDM
Selective MBE Growth of GaAs Hexagonal Nano-wire Networks on (111)B Patterned Substrates
2003 · Souichi Yoshida, Isao Tamai, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 10
Citation count: 42
H-index: 4
I10-index: 1
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