Author

K. Hinode

Observed names: Hinode Kenji, K Hinode, K. HINODE, K.. Hinode, Kenji HINODE, Kenji Hinode, Kenji Hinode Kenji Hinode

Institution: National Institute of Advanced Industrial Science and Technology

Observed institutions: Toho University, Japan Science and Technology Agency, Association for Iron & Steel Technology, International Superconductivity Technology Center, Hitachi Solutions Technology, Ltd. (Japan), Hitachi (Japan), National Institute of Advanced Industrial Science and Technology, The University of Tokyo

OpenAlex ID: A5111739784

Nb 9-Layer Fabrication Process for Superconducting Large-Scale SFQ Circuits and Its Process Evaluation

2014 · Shuichi NAGASAWA, Kenji HINODE, et al. · IEICE Transactions on Electronics · 169

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Stress-induced grain boundary fractures in Al–Si interconnects

1987 · K. Hinode, N. Owada, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 118

LPCVD Titanium Nitride for ULSIs

1991 · N. Yokoyama, K. Hinode, et al. · Journal of The Electrochemical Society · 85

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New Nb multi-layer fabrication process for large-scale SFQ circuits

2009 · S. Nagasawa, T. Satoh, et al. · Physica C Superconductivity · 71

Development of advanced Nb process for SFQ circuits

2004 · S. Nagasawa, K. Hinode, et al. · Physica C Superconductivity · 68

Resistivity Increase in Ultrafine-Line Copper Conductor for ULSIs

2001 · Kenji Hinode, Yuko Hanaoka, et al. · Japanese Journal of Applied Physics · 65

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Current status and future prospect of the Nb-based fabrication process for single flux quantum circuits

2006 · M Hidaka, S Nagasawa, et al. · Superconductor Science and Technology · 62

Increase in Electrical Resistivity of Copper and Aluminum Fine Lines

2002 · Yuko Hanaoka, Kenji Hinode, et al. · MATERIALS TRANSACTIONS · 61

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Passivation effect of silicon nitride against copper diffusion

1997 · Hiroshi Miyazaki, Hisao Kojima, et al. · Journal of Applied Physics · 55

LPCVD TiN as Barrier Layer in VLSI

1989 · N. Yokoyama, K. Hinode, et al. · Journal of The Electrochemical Society · 53

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Void formation mechanism in VLSI aluminum metallization

1989 · K. Hinode, I. Asano, et al. · IEEE Transactions on Electron Devices · 49

Effect of NH/sub 3/-plasma treatment and CMP modification on TDDB improvement in Cu metallization

2001 · J. Noguchi, N. Ohashi, et al. · IEEE Transactions on Electron Devices · 47

Control of Photocorrosion in the Copper Damascene Process

2000 · Yoshio Homma, Seiichi Kondo, et al. · Journal of The Electrochemical Society · 47

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Design of all-dc-powered high-speed single flux quantum random access memory based on a pipeline structure for memory cell arrays

2006 · Shuichi Nagasawa, Kenji Hinode, et al. · Superconductor Science and Technology · 46

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Fabrication Process of Planarized Multi-Layer Nb Integrated Circuits

2005 · T. Satoh, K. Hinode, et al. · IEEE Transactions on Applied Superconductivity · 42

Suppression of stress-induced voiding in copper interconnects

2003 · T. Oshima, K. Hinode, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 42

Whiskers grown on aluminum thin films during heat treatments

1996 · Kenji Hinode, Yoshio Homma, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 39

Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects

2002 · J. Noguchi, T. Saito, et al. · IEEE International Reliability Physics Symposium proceedings · 36

Oxygen Plasma Resistance of Low-k Organosilica Glass Films

2001 · Takeshi Furusawa, Daisuke Ryuzaki, et al. · Electrochemical and Solid-State Letters · 36

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Positron Lifetime Study of Neutron-Irradiated Molybdenum

1978 · Kenji Hinode, Shoichiro Tanigawa, et al. · Journal of the Physical Society of Japan · 35

Improvements in Fabrication Process for Nb-Based Single Flux Quantum Circuits in Japan

2008 · M. HIDAKA, S. NAGASAWA, et al. · IEICE Transactions on Electronics · 34

Heat and Moisture Resistance of Siloxane-Based Low-Dielectric-Constant Materials

2001 · Takeshi Furusawa, Daisuke Ryuzaki, et al. · Journal of The Electrochemical Society · 34

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Demonstration of a 120 GHz single-flux-quantum shift register circuit based on a 10 kA cm−2Nb process

2006 · H Akaike, T Yamada, et al. · Superconductor Science and Technology · 33

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Time-Dependent Dielectric Breakdown of Interlevel Dielectrics for Copper Metallization

1996 · Hiroshi Miyazaki, Kenji Hinode, et al. · Japanese Journal of Applied Physics · 33

A study on stress-induced migration in aluminum metallization based on direct stress measurements

1990 · Kenji Hinode, Isamu Asano, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 33

Works count: 128

Citation count: 2,274

H-index: 29

I10-index: 59