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F. Brillouet

Observed names: BRILLOUET, FRANCOIS, BRILLOUET, FRANÇOIS, F Brillouet, F. BRILLOUET, Francois Brillouet, François Brillouet
OpenAlex ID: A5111755854
First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate
1988 · M. Razeghi, M. Defour, et al. · Applied Physics Letters · 121
Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL
1999 · J. Boucart, C. Starck, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 109
1-mW CW-RT monolithic VCSEL at 1.55 μm
1999 · J. Boucart, C. Starck, et al. · IEEE Photonics Technology Letters · 80
Disordering of Ga1−xAlxAs-GaAs quantum well structures by donor sulfur diffusion
1985 · E. V. K. Rao, H. Thibierge, et al. · Applied Physics Letters · 63
Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys
1991 · J.L. Benchimol, G. Le Roux, et al. · Journal of Crystal Growth · 50
First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrate
1988 · M. Razeghi, M. Defour, et al. · Applied Physics Letters · 36
First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate
1988 · M. Razeghi, R. Blondeau, et al. · Applied Physics Letters · 21
Design of quantum well AlGaAs-GaAs stripe lasers for minimization of threshold current-application to ridge structures
1988 · S.P. Cheng, F. Brillouet, et al. · IEEE Journal of Quantum Electronics · 19
GaAs/AlGaAs ridge waveguide laser monolithically integrated with a photodetector using ion beam etching
1987 · N. Bouadma, S. Grosmaire, et al. · Electronics Letters · 16
Very low threshold current density GaInAs/AlGaInAs MQW lasers made by phosphorus-free MBE and operating in 1.5–1.6 μm range
1989 · M. Quillec, M. Allovon, et al. · Electronics Letters · 14
Integrated laser Mach-Zehnder modulator on indium phosphide free of modulated-feedback
2001 · S. Lovisa, N. Bouche, et al. · IEEE Photonics Technology Letters · 12
MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates
1988 · M. Razeghi, M. Defour, et al. · Journal of Crystal Growth · 12
Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxy
1992 · J.-L. Liévin, L. Le Gouézigou, et al. · Applied Physics Letters · 11
DWDM Hybrid-Integrated TOSA and ROSA for 10$\,\times\,$10.7-Gb/s Transmission Over 75-km Links
2012 · P. Bernasconi, L. Buhl, et al. · IEEE Photonics Technology Letters · 10
New WDM optimized integrated laser-electroabsorption modulator for 1000-km 2.5-Gb/s transmission over a wide range of operating conditions
1999 · H. Debregeas-Sillard, P. Doussiere, et al. · IEEE Photonics Technology Letters · 10
Integrated quantum cascade laser-modulator using vertically coupled cavities
2009 · J. Teissier, S. Laurent, et al. · Applied Physics Letters · 9
Growth of semi-insulating InP by GSMBE
1992 · Ph. Pagnod-Rossiaux, M. Lambert, et al. · Journal of Crystal Growth · 9
Low threshold and low dispersion MOCVD/LPE buried-heterostructure GaAs/GaAlAs lasers
1984 · F. Brillouet, J. Riou, et al. · Electronics Letters · 9
2.5-Gbit/s transmission over 1086 km of standard single-mode fiber using an integrated laser Mach-Zehnder modulator
2002 · P. Delansay, S. Gauchard, et al. · Optical Fiber Communication Conference · 7
WDM operation of a hybrid emitter integrating a wide-bandwidth on-chip mirror
1999 · H. Bissessur, C. Graver, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 7
GaAs:GaAlAs ridge waveguide lasers and their monolithic integration using the ion beam etching process
1989 · N. Bouadma, P. Correc, et al. · IEEE Journal of Quantum Electronics · 7
New low capacitance transverse junction stripe AlGaAs/GaAs laser for planar laser-MESFET integration
1988 · F. Brillouet, E.V.K. Rao, et al. · Electronics Letters · 7
Laser-MESFET optoelectronic integration on GaAs: a simple technological process
1986 · F. Brillouet, A. Clei, et al. · Electronics Letters · 7
Undercut ridge structures: A novel approach to 1.3/1.55 µm vertical-cavity lasers designed for continuous-wave operation
1998 · P. Salet, J. Jacquet, et al. · IEE Proceedings - Optoelectronics · 4
32 channel, 48 dB CNR and 46 dB budget AM-VSB transmission experiment with field-ready post-amplifiers
1992 · B. Clesca, J.-P. Blondel, et al. · Optical Amplifiers and Their Applications · 4
Works count: 45
Citation count: 668
H-index: 12
I10-index: 15
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