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M.B. Das

Observed names: M B Das, M. B. DAS, M. B. Das, Mayukh Das
Observed institutions: University of London, Pennsylvania State University, Hewlett-Packard (United States), Seoul National University, University of Illinois Urbana-Champaign, Wilkes University, Imperial College London
ORCID: 0009-0000-4209-8817
Observed ORCID: 0009-0000-4209-8817
OpenAlex ID: A5111762673
High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials
2024 · Mayukh Das, Dipanjan Sen, et al. · Nature Electronics · 96
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A high aspect ratio design approach to millimeter-wave HEMT structures
1985 · M.B. Das · IEEE Transactions on Electron Devices · 80
High-frequency performance limitations of millimeter-wave heterojunction bipolar transistors
1988 · M.B. Das · IEEE Transactions on Electron Devices · 77
Extraction of high-frequency equivalent circuit parameters of submicron gate-length MOSFET's
1998 · R. Sung, P. Bendix, et al. · IEEE Transactions on Electron Devices · 60
Millimeter-wave performance of ultrasubmicrometer-gate field-effect transistors: A comparison of MODFET, MESFET, and PBT structures
1987 · M.B. Das · IEEE Transactions on Electron Devices · 53
Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10-2to 108Hz
1986 · S.-M.J. Liu, M.B. Das, et al. · IEEE Transactions on Electron Devices · 42
Determination of physical parameters of diffusion and drift transistors
1961 · M.B. Das, A.R. Boothroyd · IRE Transactions on Electron Devices · 42
Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures
2024 · Dipanjan Sen, Harikrishnan Ravichandran, et al. · Nature Communications · 39
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High-frequency network properties of MOS transistors including the substrate resistivity effects
1969 · M.B. Das · IEEE Transactions on Electron Devices · 37
Physical limitations of MOS structures
1969 · M.B. Das · Solid-State Electronics · 37
Measurements and interpretation of low-frequency noise in FET's
1974 · M.B. Das, J.M. Moore · IEEE Transactions on Electron Devices · 36
Designing optoelectronic integrated circuit (OEIC) receivers for high sensitivity and maximally flat frequency response
1995 · M.B. Das, Jau-Wen Chen, et al. · Journal of Lightwave Technology · 32
Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors
1996 · A.K. Kirtania, M.B. Das, et al. · IEEE Transactions on Electron Devices · 31
Noise behavior of 1-µm gate-length modulation-doped FET's from 10-2to 108Hz
1985 · S.M. Liu, M.B. Das, et al. · IEEE Electron Device Letters · 29
Determination of carrier saturation velocity in short-gate-length modulation-doped FET'S
1984 · M.B. Das, W. Kopp, et al. · IEEE Electron Device Letters · 28
Optimization of gate-to-drain separation in submicron gate-length modulation doped FET's for maximum power gain performance
1994 · Jau-Wen Chen, M. Thurairaj, et al. · IEEE Transactions on Electron Devices · 26
Characterization of electron traps in ion-implanted GaAs MESFET's on undoped and Cr-doped LEC semi-insulating substrates
1983 · S. Sriram, M.B. Das · IEEE Transactions on Electron Devices · 26
On the current dependence of low-frequency noise in bipolar transistors
1975 · M.B. Das · IEEE Transactions on Electron Devices · 22
FET noise sources and their effects on amplifier performance at low frequencies
1972 · M.B. Das · IEEE Transactions on Electron Devices · 22
Low-frequency noise behavior of 0.15- mu m gate-length lattice-matched and lattice-mismatched MODFETs on InP substrates
1991 · M. Thurairaj, M.B. Das, et al. · IEEE Electron Device Letters · 21
On the determination of source and drain series resistances of MESFET's
1984 · S. Chaudhuri, M.B. Das · IEEE Electron Device Letters · 21
Design and performance analysis of InP-based high-speed and high-sensitivity optoelectronic integrated receivers
1994 · E. John, M.B. Das · IEEE Transactions on Electron Devices · 20
Determination of source and drain series resistances of ultra-short gate-length MODFETs
1989 · S.-M.J. Liu, S.-T. Fu, et al. · IEEE Electron Device Letters · 20
Determination of equivalent network parameters of short-gate-length modulation-doped field-effect transistors
1990 · S.-T. Fu, S.-M.J. Liu, et al. · IEEE Transactions on Electron Devices · 19
Nanosheets Derived from Titanium Diboride as Gate Insulators for Atomically Thin Transistors
2025 · Anshul Rasyotra, Mayukh Das, et al. · ACS Nano · 17
Works count: 79
Citation count: 1,264
H-index: 21
I10-index: 41
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