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Chafik Meliani
Observed names:
C Meliani,
C. Meliani,
Meliani, Chafik
Institution:
Ferdinand-Braun-Institut
Observed institutions:
National Taiwan University of Science and Technology,
National Taiwan University,
Orange (France),
Ferdinand-Braun-Institut,
Leibniz Association,
Alcatel-Lucent (France),
Leibniz Institute for High Performance Microelectronics
show all 7
OpenAlex ID:
A5111769513
Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking
2012
·
E. Bahat-Treidel
, Oliver Hilt
, et al.
·
IEEE Electron Device Letters
·
186
220 - 250-GHz Phased-Array Circuits in 0.13-/spl mu/m SiGe BiCMOS Technology
2013
·
Mohamed Elkhouly
, Srdjan Glisic
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
59
RF class-S power amplifiers: State-of-the-art results and potential
2010
·
Andreas Wentzel
, Chafik Meliani
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
47
SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications
2016
·
Nils G. Weimann
, Dimitri Stoppel
, et al.
·
physica status solidi (a)
·
43
245 GHz SiGe transmitter with integrated antenna and external PLL
2013
·
Klaus Schmalz
, Ruoyu Wang
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
39
Low-Power Miniature $K$ -Band Sensors for Dielectric Characterization of Biomaterials
2016
·
Farabi Ibne Jamal
, Subhajit Guha
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
38
Technology modules from micro‐ and nano‐electronics for the life sciences
2015
·
M. Birkholz
, A. Mai
, et al.
·
Wiley Interdisciplinary Reviews Nanomedicine and Nanobiotechnology
·
32
A 240 GHz direct conversion IQ receiver in 0.13 μm SiGe BiCMOS technology
2013
·
Mohamed Elkhouly
, Yanfie Mao
, et al.
·
Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
·
31
Switch-mode amplifier ICs with over 90% efficiency for Class-S PAs using GaAs-HBTs and GaN-HEMTs
2008
·
C. Meliani
, J. Flucke
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
30
DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product
2002
·
C. Meliani
, G. Post
, et al.
·
Electronics Letters
·
29
RF class-S power amplifiers: State-of-the-art results and potential
2010
·
A. Wentzel
, C. Meliani
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
23
A $G$-Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology
2014
·
Mohamed Elkhouly
, Yanfei Mao
, et al.
·
IEEE Journal of Solid-State Circuits
·
17
Label free sensing of creatinine using a 6 GHz CMOS near-field dielectric immunosensor
2015
·
S. Guha
, A. Warsinke
, et al.
·
The Analyst
·
16
PDF
Subharmonic 245 GHz SiGe receiver with antenna
2013
·
K. Schmalz
, Johannes Borngräber
, et al.
·
European Microwave Integrated Circuit Conference
·
15
An 8W GaN-based H-bridge class-D PA for the 900 MHz band enabling ternary coding
2012
·
Andreas Wentzel
, Chafik Meliani
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
14
Traveling-Wave Amplifiers in Transferred Substrate InP-HBT Technology
2009
·
T. Kraemer
, C. Meliani
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
14
A Broadband GaN-MMIC power amplifier for L to X Bands
2007
·
C. Meliani
, R. Behtash
, et al.
·
European Microwave Integrated Circuits Conference
·
13
A 330 GHz hetero-integrated source in InP-on-BiCMOS technology
2015
·
M. Hossain
, N. Weimann
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
12
A SiGe BiCMOS dielectric sensor utilizing an open-ended microstrip line in a 28 GHz colpitts oscillator
2014
·
Farabi Ibne Jamal
, Subhajit Guha
, et al.
·
European Microwave Conference (EuMC)
·
12
A 245 GHz ASK modulator and demodulator with 40 Gbits/sec data rate in 0.13 μm SiGe BiCMOS technology
2013
·
Mohamed Elkhouly
, Yanfie Mao
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
12
Optimized coding scheme for class-S amplifiers
2011
·
Andreas Wentzel
, Chafik Meliani
, et al.
·
European Microwave Conference (EuMC)
·
12
Advanced switch-mode concepts using GaN: The class-S amplifier
2010
·
W. Heinrich
, Andreas Wentzel
, et al.
·
International Conference on Microwaves, Radar & Wireless Communications
·
12
(Invited) Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach
2014
·
Marco Lisker
, Andreas Trusch
, et al.
·
ECS Transactions
·
11
PDF
A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology
2014
·
Maruf Hossain
, T. Kraemer
, et al.
·
IEEE Microwave and Wireless Components Letters
·
11
GaN devices for communication applications: evolution of amplifier architectures
2010
·
Ulf Schmid
, Rolf Reber
, et al.
·
International Journal of Microwave and Wireless Technologies
·
11
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Works count:
95
Citation count:
1,010
H-index:
14
I10-index:
28
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