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T. Enoki

Observed names: Enoki Takatomo, Enoki, Takatomo, T Enoki, TAKATOMO ENOKI, Takatomo ENOKI, Takatomo Enoki, Takatomo Enoki Takatomo Enoki
Institution: NTT (Japan)
OpenAlex ID: A5111788280
Gate Control of Spin-Orbit Interaction in an Inverted I n0.53 G a0.47 As/I n0.52 A l0.48 As Heterostructure
1997 · Junsaku Nitta, Tatsushi Akazaki, et al. · Physical Review Letters · 2,282
High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies
1996 · K.J. Chen, T. Enoki, et al. · IEEE Transactions on Electron Devices · 136
A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure
1996 · Tatsushi Akazaki, Hideaki Takayanagi, et al. · Applied Physics Letters · 128
An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation
1998 · T. Suemitsu, T. Enoki, et al. · IEEE Transactions on Electron Devices · 121
Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel
1992 · T. Akazaki, K. Arai, et al. · IEEE Electron Device Letters · 118
0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
1994 · Takatomo Enoki, Masaaki Tomizawa, et al. · Japanese Journal of Applied Physics · 117
Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
1998 · Takatomo Enoki, Haruki Yokoyama, et al. · Japanese Journal of Applied Physics · 95
30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs
2002 · T. Suemitsu, H. Yokoyama, et al. · IEEE Transactions on Electron Devices · 80
Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures
2007 · Narihiko Maeda, Masanobu Hiroki, et al. · Japanese Journal of Applied Physics · 75
Loss-compensated distributed baseband amplifier IC's for optical transmission systems
1996 · S. Kimura, Y. Imai, et al. · IEEE Transactions on Microwave Theory and Techniques · 74
Design and characteristics of InGaAs/InP composite-channel HFET's
1995 · T. Enoki, K. Arai, et al. · IEEE Transactions on Electron Devices · 73
Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates
1995 · N. Shigekawa, T. Enoki, et al. · IEEE Electron Device Letters · 64
High-performance 0.1-μm gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology
1999 · T. Suemitsu, H. Yokoyama, et al. · IEEE Transactions on Electron Devices · 63
120-GHz Tx/Rx chipset for 10-Gbit/s wireless applications using 0.1 μm-gate InP HEMTs
2005 · T. Kosugi, M. Tokumitsu, et al. · IEEE International SOI Conference (SOI) · 57
Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility Transistors
1998 · Tetsuya Suemitsu Tetsuya Suemitsu, Takatomo Enoki Takatomo Enoki, et al. · Japanese Journal of Applied Physics · 57
An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
1998 · T. Otsuji, K. Murata, et al. · IEEE Journal of Solid-State Circuits · 55
Delay time analysis for 0.4- to 5- mu m-gate InAlAs-InGaAs HEMTs
1990 · T. Enoki, K. Arai, et al. · IEEE Electron Device Letters · 54
A high-Q broad-band active inductor and its application to a low-loss analog phase shifter
1996 · H. Hayashi, M. Muraguchi, et al. · IEEE Transactions on Microwave Theory and Techniques · 52
30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency
1999 · Tetsuya Suemitsu Tetsuya Suemitsu, Tetsuyoshi Ishii Tetsuyoshi Ishii, et al. · Japanese Journal of Applied Physics · 50
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Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure by inserting a strained InAs quantum well
1994 · Tatsushi Akazaki, Junsaku Nitta, et al. · Applied Physics Letters · 50
100-Gb/s Multiplexing and Demultiplexing IC Operations in InP HEMT Technology
2004 · K. Murata, K. Sano, et al. · IEEE Journal of Solid-State Circuits · 47
0.3- mu m advanced SAINT FET's having asymmetric n/sup +/-layers for ultra-high-frequency GaAs MMIC's
1988 · T. Enoki, K. Yamasaki, et al. · IEEE Transactions on Electron Devices · 47
Optical repeater circuit design based on InAlAs/InGaAs HEMT digital IC technology
1997 · M. Yoneyama, A. Sano, et al. · IEEE Transactions on Microwave Theory and Techniques · 46
Gate control of spin–orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure
1998 · Junsaku Nitta, Tatsushi Akazaki, et al. · Physica E Low-dimensional Systems and Nanostructures · 45
0–90 GHz InAlAs/InGaAs/InP HEMT distributedbaseband amplifier IC
1995 · S. Kimura, Y. Imai, et al. · Electronics Letters · 45
Works count: 262
Citation count: 6,095
H-index: 35
I10-index: 105
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