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T. Kanamori
Observed names:
T Kanamori,
T. KANAMORI,
Terutoki Kanamori
Observed institutions:
Waseda University,
NTT (Japan),
NTT (United States),
NTT Innovative Devices Corporation (Japan)
OpenAlex ID:
A5111799302
Gain-flattened tellurite-based EDFA with a flat amplification bandwidth of 76 nm
1998
·
M. Yamada
, A. Mori
, et al.
·
IEEE Photonics Technology Letters
·
222
Prediction of loss minima in infra-red optical fibres
1981
·
S. Shibata
, M. Horiguchi
, et al.
·
Electronics Letters
·
219
Broadband and gain-flattened amplifier composedof a 1.55 µm-band and a 1.58 µm-band Er 3+ -doped fibre amplifierin a parallel configuration
1997
·
M. Yamada
, H. Ono
, et al.
·
Electronics Letters
·
199
1 Tbit/s (100 Gbit/s × 10 channel) OTDM/WDMtransmissionusing a single supercontinuum WDM source
1996
·
T. Morioka
, H. Takara
, et al.
·
Electronics Letters
·
189
Chalcogenide glass fibers for mid-infrared transmission
1984
·
T. Kanamori
, Y. Terunuma
, et al.
·
Journal of Lightwave Technology
·
161
Applications of highly nonlinear chalcogenide glass fibers in ultrafast all-optical switches
1993
·
M. Asobe
, T. Kanamori
, et al.
·
IEEE Journal of Quantum Electronics
·
139
Ultrafast all-optical switching using highly nonlinear chalcogenide glass fiber
1992
·
M. Asobe
, T. Kanamori
, et al.
·
IEEE Photonics Technology Letters
·
125
Fluoride-based erbium-doped fiber amplifier with inherently flat gain spectrum
1996
·
M. Yamada
, T. Kanamori
, et al.
·
IEEE Photonics Technology Letters
·
101
1.58-μm band gain-flattened erbium-doped fiber amplifiers for WDM transmission systems
1999
·
H. Ono
, M. Yamada
, et al.
·
Journal of Lightwave Technology
·
96
1.58-μm broad-band erbium-doped tellurite fiber amplifier
2002
·
A. Mori
, T. Sakamoto
, et al.
·
Journal of Lightwave Technology
·
95
Low noise broadband tellurite-based Er 3+ -dopedfibre amplifiers
1998
·
A. Mori
, K. Kobayashi
, et al.
·
Electronics Letters
·
79
A high gain, high output saturation power Pr/sup 3+/-doped fluoride fiber amplifier operating at 1.3 mu m
1991
·
Y. Ohishi
, T. Kanamori
, et al.
·
IEEE Photonics Technology Letters
·
79
Tm-doped fiber amplifiers for 1470-nm-band WDM signals
2000
·
S. Aozasa
, T. Sakamoto
, et al.
·
IEEE Photonics Technology Letters
·
67
Development of an efficient praseodymium-doped fiber amplifier
1998
·
Y. Nishida
, M. Yamada
, et al.
·
IEEE Journal of Quantum Electronics
·
67
1.4-μm-band gain characteristics of a Tm-Ho-doped ZBLYAN fiber amplifier pumped in the 0.8-μm band
1995
·
T. Sakamoto
, M. Shimizu
, et al.
·
IEEE Photonics Technology Letters
·
59
Efficient and ultrafast all-optical switching using high Δ n , small core chalcogenide glass fibre
1993
·
M. Asobe
, H. Itoh
, et al.
·
Electronics Letters
·
58
35-dB gain Tm-doped ZBLYAN fiber amplifier operating at 1.65 μm
1996
·
T. Sakamoto
, M. Shimizu
, et al.
·
IEEE Photonics Technology Letters
·
55
Fluoride-glass-cladded optical fibres for mid-infra-red ray transmission
1981
·
S. Mitachi
, T. Miyashita
, et al.
·
Electronics Letters
·
53
Low-noise and high-power Pr/sup 3+/-doped fluoride fiber amplifier
1995
·
M. Yamada
, M. Shimizu
, et al.
·
IEEE Photonics Technology Letters
·
48
Laser diode pumped Pr 3+ -doped and Pr 3+ -Yb 3+ -codoped fluoride fibre amplifiers operating at 1.3 μm
1991
·
Y. Ohishi
, T. Kanamori
, et al.
·
Electronics Letters
·
45
Transmission loss characteristics of As40S60 and As38Ge5Se57 glass unclad fibers
1985
·
T. Kanamori
, Y. Terunuma
, et al.
·
Journal of Non-Crystalline Solids
·
41
Gain-shifted thulium-doped fibre amplifiers employingnovel high concentration doping technique
2000
·
S. Aozasa
, T. Sakamoto
, et al.
·
Electronics Letters
·
40
1480-1510 nm-band Tm doped fiber amplifier (TDFA) with a high power conversion efficiency of 42 %
2002
·
S. Aozasa
, H. Masuda
, et al.
·
Optical Fiber Communication Conference
·
37
Concentration effect on gain of Pr/sup 3+/-doped fluoride fiber for 1.3 mu m amplification
1992
·
Y. Ohishi
, T. Kanamori
, et al.
·
IEEE Photonics Technology Letters
·
37
Material dispersion in fluoride glasses
1982
·
K. Jinguji
, M. Horiguchi
, et al.
·
Electronics Letters
·
33
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Works count:
68
Citation count:
2,878
H-index:
28
I10-index:
50
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