Author

J. Itoh

Observed names: ITOH, Junji, Itoh, J., J Itoh, Junji ITOH, Junji Itoh, Junji Itoh Junji Itoh

Institution: National Institute of Advanced Industrial Science and Technology

Observed institutions: Tokyo Institute of Technology, Kanazawa Institute of Technology, Tokai University, University of Tsukuba, Tokyo Denki University, Japan Science and Technology Agency, Toppan (Japan), National Institute of Advanced Industrial Science and Technology

OpenAlex ID: A5111805581

Role of space charge in scanned probe oxidation

1998 · J. A. Dagata, T. Inoue, et al. · Journal of Applied Physics · 168

Definitive Experimental Evidence for Two-Band Superconductivity in MgB2

2003 · S. Tsuda, T. Yokoya, et al. · Physical Review Letters · 144

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Understanding scanned probe oxidation of silicon

1998 · J. A. Dagata, T. Inoue, et al. · Applied Physics Letters · 110

Predictive model for scanned probe oxidation kinetics

2000 · J. A. Dagata, F. Perez-Murano, et al. · Applied Physics Letters · 109

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Fabrication of double-gated Si field emitter arrays for focused electron beam generation

1995 · Junji Itoh, Yasushi Tohma, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 108

Electron emission from nitrogen-doped pyramidal-shape diamond and its battery operation

1997 · K. Okano, T. Yamada, et al. · Applied Physics Letters · 74

Fabrication and characterization of HfC coated Si field emitter arrays

2003 · T. Sato, S. Yamamoto, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 54

Ultrastable emission from a metal–oxide–semiconductor field-effect transistor-structured Si emitter tip

1996 · Junji Itoh, Takayuki Hirano, et al. · Applied Physics Letters · 51

Control of emission currents from silicon field emitter arrays using a built-in MOSFET

1997 · Seigo Kanemaru, Takayuki Hirano, et al. · Applied Surface Science · 50

Development and applications of field emitter arrays in Japan

1997 · Junji Itoh · Applied Surface Science · 47

Metal-insulator-vacuum type electron emission from N-containing chemical vapor deposited diamond

2001 · Ken Okano, Takatoshi Yamada, et al. · Applied Physics Letters · 46

Nonresonant detection of electric force gradients by dynamic force microscopy

1994 · Hiroshi Yokoyama, Takahito Inoue, et al. · Applied Physics Letters · 46

Control of emission characteristics of silicon field emitter arrays by an ion implantation technique

1996 · Seigo Kanemaru, Takayuki Hirano, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 43

Air-bridge-structured silicon nanowire and anomalous conductivity

1999 · Hideo Fujii, Seigo Kanemaru, et al. · Applied Physics Letters · 39

Fabrication and characterization of lateral field-emitter triodes

1991 · S. Kanemaru, J. Itoh · IEEE Transactions on Electron Devices · 39

Superconducting properties of the 18 K phase in yttrium sesquicarbide system

2004 · T. Nakane, T. Mochiku, et al. · Applied Physics Letters · 32

Beam focusing characteristics of silicon microtips with an in-plane lens

1997 · C. Py, J. Itoh, et al. · IEEE Transactions on Electron Devices · 30

Potential profile between boron-doped diamond electron emitter and anode electrode

2000 · Takatoshi Yamada, Atsuhito Sawabe, et al. · Applied Physics Letters · 29

Modeling of field emission nanotriodes with carbon nanotube emitters

2003 · D. Nicolaescu, V. Filip, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 28

Electron-beam characteristics of double-gated Si field emitter arrays

1996 · Yasushi Toma, Seigo Kanemaru, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 28

Emission current saturation of the p-type silicon gated field emitter array

1996 · Takayuki Hirano, Seigo Kanemaru, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 27

Fabrication of Si field emitter arrays integrated with metal–oxide–semiconductor field-effect transistor driving circuits

2002 · M. Nagao, Y. Tamura, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 26

Electron emission from the pyramidal-shaped diamond after hydrogen and oxygen surface treatments

1997 · T. Yamada, H. Ishihara, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 24

Fabrication and characterization of a nanogap edge emitter with a silicon-on-insulator wafer

1999 · H Fujii, S Kanemaru, et al. · Applied Surface Science · 22

Fabrication of an ultrasharp and high-aspect-ratio microprobe with a silicon-on-insulator wafer for scanning force microscopy

1995 · Junji Itoh, Yasushi Tohma, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 22

Works count: 211

Citation count: 2,371

H-index: 23

I10-index: 67