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Robert Shaw

The next generation of high voltage (10 kV) silicon carbide power modules
2016 · Brandon Passmore, Zach Cole, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 106
High-temperature silicon carbide and silicon on insulator based integrated power modules
2009 · A. Lostetter, J. Hornberger, et al. · IEEE Vehicle Power and Propulsion Conference (VPPC) · 48
A 650 V/150 A enhancement mode GaN-based half-bridge power module for high frequency power conversion systems
2015 · B. Passmore, S. Storkov, et al. · IEEE Energy Conversion Congress and Exposition (ECCE) · 42
Safe operating area considerations in LDMOS transistors
2003 · P. Hower, J. Lin, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 33
A compact 110 kVA, 140°C ambient, 105°C liquid cooled, all-SiC inverter for electric vehicle traction drives
2017 · K. Olejniczak, T. Flint, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 32
High-Performance, Wide-Bandgap Power Electronics
2014 · Ty McNutt, Brandon Passmore, et al. · Journal of Electronic Materials · 18
A 200 kVA electric vehicle traction drive inverter having enhanced performance over its entire operating region
2017 · Kraig Olejniczak, Ty McNutt, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 13
High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards
2010 · B. Reese, B. McPherson, et al. · Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) · 12
Compact High Current, High Energy Closing Switches for Electric Gun Applications
1993 · D. Bhasavanich, D.F. Strachan, et al. · IEEE International Pulsed Power Conference (PPC) · 11
High temperature, wide bandgap full-bridge power modules for high frequency applications
2015 · Z. Cole, B. McGee, et al. · IEEE International Workshop on Integrated Power Packaging (IWIPP) · 9
Robust 80 V LDMOS and 100 V DECMOS in a streamlined SOI technology for analog power applications
2003 · S. Merchant, T. Efland, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 8
High-Temperature SOI/SiC-Based DC-DC Converter Suite
2008 · Bradley A. Reese, Brice McPherson, et al. · International Journal of Power Management Electronics · 7
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Wide bandgap packaging for next generation power conversion systems
2013 · Brandon Passmore, Zach Cole, et al. · IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG) · 6
A High Performance Power Package for Wide Bandgap Semiconductors Using Novel Wire Bondless Power Interconnections
2015 · Jennifer Stabach, Zach Cole, et al. · IMAPSource Proceedings · 5
High Temperature Silicon Carbide Power Modules for High Performance Systems
2012 · Alexander B. Lostetter, J. Hornberger, et al. · Materials science forum · 5
High Temperature Silicon Carbide Power Modules for High Performance Systems
2011 · J. Hornberger, B. McPherson, et al. · Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) · 5
100 Hz, 5 To 40kV Triggered Spark Gap For Medium Power Modulators
2005 · D. Bhasavanich, R. Shaw, et al. · IEEE International Power Modulator Symposium and High-Voltage Workshop (IPMHVC) · 5
Demonstration of a modular, repetitive-fired 1/4-MJ PFN for ETC guns
2002 · J. Hammon, D. Bhasavanich, et al. · IEEE International Power Modulator Symposium and High-Voltage Workshop (IPMHVC) · 5
Demonstration of a modular, repetitive-fired 1/4-MJ PFN for ETC guns
1997 · D. Bhasavanich, T. daSilva, et al. · IEEE Transactions on Magnetics · 3
Comparison of Silicon Carbide Packages with Different Solder Attach Materials under High Temperature, Fast Power Cycling Conditions
2019 · Lauren E. Kegley, Tim Foster, et al. · IEEE International Workshop on Integrated Power Packaging (IWIPP) · 2
High Current (>1000A), High Temperature (>200°C) Silicon Carbide Trench MOSFET (TMOS) Power Modules for High Performance Systems
2012 · Brice R. McPherson, Robert Shaw, et al. · SAE International journal of passenger cars. Electronic and electrical systems · 2
Thermal Stress Reliability Study on Substrates for High Temperature, Silicon Carbide Power Electronic Modules
2012 · R. Shaw, P. Doyle, et al. · Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) · 1
Flexible Repetitive Pulser For Low-temperature Pasteurization Of Foods
2005 · H.G. Hammon, S. Hitchcock, et al. · IEEE International Power Modulator Symposium and High-Voltage Workshop (IPMHVC) · 1
Thermal Verification of a High-Temperature Power Package Utilizing Silicon Carbide Devices
2026 · R. Shaw, B. McPherson, et al. · IMAPSource Proceedings
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A High Temperature (> 250 °C) SiC Schottky Diode Bridge Rectifier for Extreme Environment Applications
2014 · B. S. Passmore, J. Stabach, et al. · Additional Conferences (Device Packaging HiTEC HiTEN & CICMT)
Works count: 29
Citation count: 379
H-index: 9
I10-index: 9
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