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Christiane Dubois

Surface recombination velocity of highly doped n-type silicon
1996 · Andrés Cuevas, Paul A. Basore, et al. · Journal of Applied Physics · 229
Analysis of Antimony Doping in Tin Oxide Thin Films Obtained by the Sol-Gel Method
1997 · C. Terrier, J.P. Chatelon, et al. · Journal of Sol-Gel Science and Technology · 96
High quality Si1−x−yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane
1995 · J. Mi, P. Warren, et al. · Applied Physics Letters · 81
Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon
2008 · D. Cammilleri, F. Fossard, et al. · Thin Solid Films · 46
Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters
2002 · A. Cuevas, G. Giroult-Matlakowski, et al. · World Conference on Photovoltaic Energy Conversion · 45
Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers
2010 · C. Marcenat, J. Kačmarčík, et al. · Physical Review B · 41
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Structural properties of undoped and doped cubic GaN grown on SiC(001)
2002 · E. Martinez-Guerrero, E. Bellet-Amalric, et al. · Journal of Applied Physics · 41
Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing
1998 · D. Mathiot, A. Lachiq, et al. · Materials Science in Semiconductor Processing · 40
Quantification of germanium and boron in heterostructures Si/Si1−xGex/Si by SIMS
1997 · G Prudon, B Gautier, et al. · Thin Solid Films · 32
Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers
2013 · A. Grockowiak, T. Klein, et al. · Physical Review B · 24
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Quantitative SIMS measurement of high concentration of boron in silicon (up to 20at.%) using an isotopic comparative method
2008 · Christiane Dubois, Gilles Prudon, et al. · Applied Surface Science · 23
Layer morphology and Al implant profiles after annealing of supersaturated, single-crystalline, amorphous, and nanocrystalline SiC
2004 · V. Heera, A. Mücklich, et al. · Journal of Applied Physics · 23
A comparative study of the electrical properties of heavily Al implanted, single crystalline and nanocrystalline SiC
2006 · V. Heera, K. N. Madhusoodanan, et al. · Journal of Applied Physics · 22
Control of the Ti diffusion in Pt/Ti bottom electrodes for the fabrication of PZT thin film transducers
2002 · C. Millon, C. Malhaire, et al. · Materials Science in Semiconductor Processing · 21
Trapping of gold by nanocavities induced by H+ or He++ implantation in float zone and Czochralski grown silicon wafers
2001 · I. Périchaud, E. Yakimov, et al. · Journal of Applied Physics · 19
Superconducting properties of laser annealed implanted Si:B epilayers
2013 · A Grockowiak, T Klein, et al. · Superconductor Science and Technology · 18
p and n type doping of cubic GaN on SiC (001)
2001 · E Martinez-Guerrero, B Daudin, et al. · Materials Science and Engineering B · 18
Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography
2012 · K. Hoummada, F. Dahlem, et al. · Applied Physics Letters · 17
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Comparative study of rapid and classical thermal phosphorus diffusion on polycrystalline silicon thin films
2001 · S Bourdais, G Beaucarne, et al. · Solar Energy Materials and Solar Cells · 17
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
2007 · Erwan Oliviero, Mihai Lazar, et al. · Materials science forum · 13
Iron Gettering on Cavities Produced by Helium Implantation
1999 · F. Roqueta, A. Grob, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 13
Direct laser printing for high efficiency silicon solar cells fabrication
2010 · G. Poulain, C. Boulord, et al. · Applied Surface Science · 12
Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100)
2004 · A. Sibai, S. Lhostis, et al. · Microelectronics Reliability · 11
Study of the thermal stability at the interface
1997 · A. Labiadh, F. Braud, et al. · Microelectronic Engineering · 11
Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures
2003 · S. Koumetz, C. Dubois · Journal of Crystal Growth · 10
Works count: 85
Citation count: 1,084
H-index: 17
I10-index: 25
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