Author

Kazuyuki Sawada

Observed name: K. Sawada

OpenAlex ID: A5112373940

Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)

2015 · Osamu Kusumoto, Atsushi Ohoka, et al. · Microelectronics Reliability · 27

Electromigration in AlSiCu/TiN/Ti interconnects with Ti and TiN additional layers

1994 · Mitsuru Sekiguchi, Kazuyuki Sawada, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 20

40mΩ / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications

2014 · Atsushi Ohoka, Nobuyuki Horikawa, et al. · Materials science forum · 15

A 20 ns battery-operated 16 Mb CMOS DRAM

1993 · H. Yamauchi, T. Suzuki, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 14

A circuit technology for high-speed battery-operated 16-Mb CMOS DRAM's

1993 · H. Yamauchi, T. Suzuki, et al. · IEEE Journal of Solid-State Circuits · 9

Reduction of RonA retaining high threshold voltage in SiC DioMOS by improved channel design

2018 · Atsushi Ohoka, Masao Uchida, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 7

A sub-0.5 μA/MB data-retention DRAM

2002 · H. Yamauchi, T. Iwata, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 5

Sense Device Structure in Hybrid IGBT with Constant Current Sense Ratio for Entire Collector Current Range

2008 · H. Yamagiwa, T. Saji, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 4

A 800 V Hybrid IGBT Having a High-Speed Internal Diode for Power-Supply Applications

2007 · S. Kaneko, H. Yamagiwa, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3

(CD-5) TDDB breakdown of th-SiO2 on 4H-SiC: 3D SEM failure analysis

2014 · M. Hayashi, K. Tanaka, et al. · IEEE International Reliability Physics Symposium proceedings · 2

Compact 100A/1200V SiC Power Module for Industrial Applications Using DioMOS (Diode in MOSFET) Devices

2014 · Keisuke Watanabe, Norimitsu Hozumi, et al. · PCIM Europe: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe) · 1

Advantages of Temperature-stable Ron of SiC DioMOS in Practical Applications

2015 · Hideki Nakata, Kazuyuki Sawada, et al.

Leakage Current Reduction in Surrounding Hi-Capacitor DRAM Cell

1991 · Geshu Fuse, I. Nakao, et al. · IEICE Transactions on Electronics

The Effect of High Fields on MOS Device and Circuit Performance

1984 · Hidetoshi Matsumoto, Kazuyuki Sawada, et al.

Works count: 14

Citation count: 107

H-index: 6

I10-index: 4