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R. Krishnasamy
Observed name:
R Krishnasamy
Institution:
GlobalFoundries (United States)
Observed institutions:
IBM (United States),
Infineon Technologies (Germany),
GlobalFoundries (United States),
IBM Research - Thomas J. Watson Research Center
OpenAlex ID:
A5113049427
SiGe HBT technology with f/sub max//f/sub T/ = 350/300 GHz and gate delay below 3.3 ps
2005
·
M. Khater
, J.-S. Rieh
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
79
SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz
2004
·
J.-S. Rieh
, D. Greenberg
, et al.
·
Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
·
59
RFCMOS technology from 0.25μm to 65nm: the state of the art
2004
·
J. Pekarik
, D. Greenberg
, et al.
·
Custom Integrated Circuits Conference
·
38
Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices
2006
·
M. Ieong
, J. Sudijono
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
24
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz
2022
·
U. S. Raghunathan
, S. Sirohi
, et al.
·
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
·
21
Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability
2022
·
M. J. Hauser
, P. Srinivasan
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
8
Effect of hot carrier stress on device junctions measured by electron holography and scanning capacitance microscopy
2018
·
Y. Y. Wang
, J. Nxumalo
, et al.
·
Applied Physics Letters
·
8
0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications
2014
·
C. Pei
, G. Wang
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
5
2-D shallow junction mapping by dual lens electron holography
2017
·
Y. Y. Wang
, J. Nxumalo
, et al.
·
International Workshop on Junction Technology
·
4
2D carrier profiles by SSRM and TCAD for root cause analysis of low Vt PFET
2017
·
J. N. Nxumalo
, Y. Y. Wang
, et al.
·
International Workshop on Junction Technology
·
1
低V_t PFETの根本原因解析のためのSSRMおよびTCADによる2次元キャリアプロフィル【Powered by NICT】
2017
·
J N Nxumalo
, Y Y Wang
, et al.
·
IEEE Conference Proceedings
Tantalum lightshield for CMOS image sensor with global shutter
2009
·
J. Gambino
, R. J. Rassel
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
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Works count:
12
Citation count:
247
H-index:
7
I10-index:
5
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