Author

Katsumasa Kamiya

Observed names: Kamiya, Katsumasa, Katsumasa KAMIYA, Katsumasa Kamiya (473062)

Institution: Kanagawa Institute of Technology

Observed institutions: Centre National de la Recherche Scientifique, University of Tsukuba, University of Hyogo, Kanagawa Institute of Technology, Japan Science and Technology Agency, Institut de Physique et Chimie des Matériaux de Strasbourg, Center for Computational Sciences, University of Tsukuba, Université de Strasbourg, The University of Tokyo, Hyogo University, Stanford University

OpenAlex ID: A5113130910

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

2012 · Katsumasa Kamiya, Moon Young Yang, et al. · Applied Physics Letters · 111

Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode

2013 · Euijun Cha, Jiyong Woo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 89

An accurate density functional theory based estimation of pKa values of polar residues combined with experimental data: from amino acids to minimal proteins

2012 · Toru Matsui, Takeshi Baba, et al. · Physical Chemistry Chemical Physics · 82

Energetics and electronic structure of graphene adsorbed on HfO 2 (111): Density functional theory calculations

2011 · Katsumasa Kamiya, Naoto Umezawa, et al. · Physical Review B · 65

Possible Mechanism of Proton Transfer through Peptide Groups in the H-Pathway of the Bovine Cytochrome c Oxidase

2007 · Katsumasa Kamiya, Mauro Boero, et al. · Journal of the American Chemical Society · 65

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

2013 · Katsumasa Kamiya, Moon Young Yang, et al. · Physical Review B · 59

Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories

2013 · Moon Young Yang, Katsumasa Kamiya, et al. · Applied Physics Letters · 54

Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency

2011 · Katsumasa Kamiya, Yasuhiro Ebihara, et al. · Applied Physics Letters · 50

Structural and functional characterization of nylon hydrolases

2020 · Seiji Negoro, Dai-Ichiro Kato, et al. · Methods in enzymology on CD-ROM/Methods in enzymology · 37

A density functional study on the pKa of small polyprotic molecules

2014 · Takeshi Baba, Toru Matsui, et al. · International Journal of Quantum Chemistry · 36

Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching

2013 · Katsumasa Kamiya, Moon Young Yang, et al. · IEEE Transactions on Electron Devices · 32

Enol-to-keto Tautomerism of Peptide Groups

2006 · Katsumasa Kamiya, Mauro Boero, et al. · The Journal of Physical Chemistry B · 29

A QM/MM Study of the l -Threonine Formation Reaction of Threonine Synthase: Implications into the Mechanism of the Reaction Specificity

2014 · Mitsuo Shoji, Kyohei Hanaoka, et al. · Journal of the American Chemical Society · 23

Energetics and electronic structure of encapsulated single-stranded DNA in carbon nanotubes

2011 · Katsumasa Kamiya, Susumu Okada · Physical Review B · 23

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Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide

2012 · Yasuhiro Ebihara, Kenta Chokawa, et al. · Applied Physics Letters · 22

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Atomistic Design of Guiding Principles for High Quality Metal–Oxide–Nitride–Oxide–Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers

2011 · Keita Yamguchi, Akira Otake, et al. · Japanese Journal of Applied Physics · 22

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Nylon-Oligomer Hydrolase Promoting Cleavage Reactions in Unnatural Amide Compounds

2014 · Katsumasa Kamiya, Takeshi Baba, et al. · The Journal of Physical Chemistry Letters · 17

Origins of Negative Fixed Charge in Wet Oxidation for SiC

2013 · Katsumasa Kamiya, Yasuhio Ebihara, et al. · Materials science forum · 17

Interstitial oxygen induced Fermi level pinning in the Al2O3-based high-k MISFET with heavy-doped n-type poly-Si gates

2013 · Moon Young Yang, Katsumasa Kamiya, et al. · AIP Advances · 15

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Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3 Insertion Layer

2013 · Moon Young Yang, Katsumasa Kamiya, et al. · Japanese Journal of Applied Physics · 15

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Unraveling the degradation of artificial amide bonds in nylon oligomer hydrolase: from induced-fit to acylation processes

2014 · Takeshi Baba, Mauro Boero, et al. · Physical Chemistry Chemical Physics · 14

Molecular dynamics studies on the mutational structures of a nylon-6 byproduct-degrading enzyme

2011 · Takeshi Baba, Katsumasa Kamiya, et al. · Chemical Physics Letters · 13

Origin of the unidentified positive mobile ions causing the bias temperature instability in SiC MOSFETs and their diffusion process

2016 · Hiroki Shirakawa, Katsumasa Kamiya, et al. · Applied Physics Express · 12

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Role of nitrogen incorporation into Al2O3-based resistive random-access memory

2014 · Moon Young Yang, Katsumasa Kamiya, et al. · Applied Physics Express · 12

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First-principles evaluation of penetration energy of metal atom into Si substrate

2014 · Tomoki Hiramatsu, Takashi Yamauchi, et al. · Japanese Journal of Applied Physics · 12

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Works count: 105

Citation count: 1,124

H-index: 17

I10-index: 30