Author

K. Heime

Observed names: Heime K., Heime, Klaus, K Heime, K. HEIME, K.Heime, Klaus Heime

Institutions: University of Duisburg-Essen, RWTH Aachen University

Observed institutions: Forschungszentrum Jülich, Czech Academy of Sciences, Paderborn University, Aixtron (Germany), Deutsche Bundespost, FZU - Institute of Physics of the Czech Academy of Sciences, Philips (Netherlands), Shanghai Institute of Microsystem and Information Technology, Signify (Netherlands), University of Aveiro, University of Duisburg-Essen, RWTH Aachen University, FH Aachen

OpenAlex ID: A5113483779

Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

1998 · L. Eckey, U. von Gfug, et al. · Journal of Applied Physics · 99

LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

1992 · F.E.G. Guimarães, B. Elsner, et al. · Journal of Crystal Growth · 90

Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

1984 · E. F. Schubert, K. Ploog, et al. · Applied Physics A · 74

Deep-level analysis in (AlGa)As—GaAs 2-D electron gas devices by means of low-frequency noise measurements

1984 · L. Loreck, H. Dambkes, et al. · IEEE Electron Device Letters · 69

Very low resistance NiAuGeNi contacts to n-GaAs

1974 · K. Heime, U. König, et al. · Solid-State Electronics · 69

Diffusion in III-V semiconductors from spin-on-film sources

1984 · N Arnold, R Schmitt, et al. · Journal of Physics D Applied Physics · 59

Compensation effects in Mg-doped GaN epilayers

1998 · L Eckey, U Von Gfug, et al. · Journal of Crystal Growth · 40

Improved short-channel GaAs MESFET's by use of higher doping concentration

1984 · H. Daembkes, W. Brockerhoff, et al. · IEEE Transactions on Electron Devices · 38

An improved model to explain ohmic contact resistance of f-GaAs and other semiconductors

1986 · Wu Dingfen, Wang Dening, et al. · Solid-State Electronics · 32

Zinc diffusion in InP using diethylzinc and phosphine

1992 · J. Wisser, M. Glade, et al. · Journal of Applied Physics · 28

Ingaas Field-Effect Transistors

1989 · K. Heime · 28

Vapor pressures of Y, Ba, Cu precursors for the growth of YBa2Cu3O7 by MOVPE

1992 · E. Waffenschmidt, J. Musolf, et al. · Journal of Superconductivity · 27

The 1/f noise of InP based 2DEG devices and its dependence on mobility

1999 · J. Berntgen, K. Heime, et al. · IEEE Transactions on Electron Devices · 26

Photoluminescence study of interdiffusion in In0.53Ga0.47As/InP surface quantum wells

1992 · J. Oshinowo, A. Forchel, et al. · Applied Physics Letters · 26

Characterization of MOVPE grown InPSb/InAs heterostructures

1998 · D. Drews, A. Schneider, et al. · Applied Surface Science · 25

Photo-f.e.t. method: high-resolution deep-level measurement technique using a m.e.s.f.e.t. structure

1980 · F.J. Tegude, K. Heime · Electronics Letters · 24

InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm

2000 · A. Joullié, E. M. Skouri, et al. · Applied Physics Letters · 23

Double-heterojunction lattice-matched and pseudomorphic InGaAs HEMT with delta -doped InP supply layers and p-InP barrier enhancement layer grown by LP-MOVPE

1993 · A. Mesquida Kusters, A. Kohl, et al. · IEEE Electron Device Letters · 23

High-performance undoped InP/n-In/sub 0.53/Ga/sub 0.47/As MSM photodetectors grown by LP-MOVPE

1992 · Chang-Xin Shi, D. Grutzmacher, et al. · IEEE Transactions on Electron Devices · 23

Arsenic antisite defects in Alx Ga1−x As observed by luminescence-detected electron-spin resonance

1989 · M. Fockele, B. K. Meyer, et al. · Physical review. B, Condensed matter · 23

New explanation of N D −1 dependence of specific contact resistance for n -GaAs

1982 · Wu Dingfen, K. Heime · Electronics Letters · 23

Characterization of the interface abruptness of In0.53Ga0.47As/InP multi quantum wells by Raman spectroscopy, X-ray diffractometry and photoluminescence

1994 · J. Geurts, J. Finders, et al. · Journal of Crystal Growth · 22

Reduced incorporation of unintentional impurities and intrinsic defects in ZnSe and ZnS grown by MOVPE

1992 · M. Heuken, J. Söllner, et al. · Journal of Crystal Growth · 22

Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

1984 · E. F. Schubert, K. Ploog, et al. · Applied Physics A · 22

Deposition by LP-MOVPE in the Ga-In-As-P system on differently oriented substrates

1992 · B. Elsner, R. Westphalen, et al. · Journal of Crystal Growth · 21

Works count: 263

Citation count: 2,047

H-index: 22

I10-index: 70