Author

A. Wei

Observed names: Andy Wei, Anying Wei, Wei Andy, Wei, A., Wei, Andy, 1972-

Institution: Second Military Medical University

Observed institutions: IBM (United States), University of Arizona, Second Military Medical University, Applied Materials (United States), GlobalFoundries (United States), Advanced Micro Devices (United States), GlobalFoundries (Germany), Massachusetts Institute of Technology

ORCID: 0009-0005-6046-1815

Observed ORCID: 0009-0005-6046-1815

OpenAlex ID: A5113492986

Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

1994 · D.M. Fleetwood, S.L. Kosier, et al. · IEEE Transactions on Nuclear Science · 287

Charge separation for bipolar transistors

1993 · S.L. Kosier, R.D. Schrimpf, et al. · IEEE Transactions on Nuclear Science · 204

Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs

1995 · S.L. Kosier, A. Wei, et al. · IEEE Transactions on Electron Devices · 118

Bounding the total-dose response of modern bipolar transistors

1994 · S.L. Kosier, W.E. Combs, et al. · IEEE Transactions on Nuclear Science · 81

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Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET

2010 · Stefan Flachowsky, Andy Wei, et al. · IEEE Transactions on Electron Devices · 70

Effect of floating-body charge on SOI MOSFET design

1998 · A. Wei, M.J. Sherony, et al. · IEEE Transactions on Electron Devices · 64

Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies

2005 · L.T. Su, J. Pellerin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 63

Super self-aligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy

2003 · Jong-Ho Lee, G. Taraschi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 61

HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation

2013 · K. Joshi, S. Hung, et al. · IEEE International Reliability Physics Symposium proceedings · 60

Minimizing floating-body-induced threshold voltage variation in partially depleted SOI CMOS

1996 · A. Wei, D.A. Antoniadis, et al. · IEEE Electron Device Letters · 53

Dose-rate effects on radiation-induced bipolar junction transistor gain degradation

1994 · A. Wei, S. L. Kosier, et al. · Applied Physics Letters · 52

Transient behavior of the kink effect in partially-depleted SOI MOSFET's

1995 · A. Wei, M.J. Sherony, et al. · IEEE Electron Device Letters · 45

Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT's

1995 · A. Wei, S.L. Kosier, et al. · IEEE Transactions on Electron Devices · 44

Measurement of transient effects in SOI DRAM/SRAM access transistors

1996 · A. Wei, D.A. Antoniadis · IEEE Electron Device Letters · 41

Multiple Stress Memorization In Advanced SOI CMOS Technologies

2007 · A. Wei, M. Wiatr, et al. · Symposium on VLSI Technology · 40

Architecting advanced technologies for 14nm and beyond with 3D FinFET transistors for the future SoC applications

2011 · A. Keshavarzi, D. Somasekhar, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23

Design methodology for minimizing hysteretic V/sub T/-variation in partially-depleted SOI CMOS

2002 · A. Wei, D.A. Antoniadis · Technical digest - International Electron Devices Meeting/Technical digest · 21

Advanced SOI CMOS transistor technologies for high-performance microprocessor applications

2009 · Manfred Horstmann, Andy Wei, et al. · Custom Integrated Circuits Conference · 20

Taking SOI substrates and low-k dielectrics into high-volume microprocessor production

2004 · D. Greenlaw, G. Burbach, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 19

Challenges of analog and I/O scaling in 10nm SoC technology and beyond

2014 · A. Wei, J. Singh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17

Advantages and challenges of high performance CMOS on SOI

2002 · M.M. Pelella, W. Maszara, et al. · IEEE International SOI Conference (SOI) · 16

Integration Challenges for Advanced Process-Strained CMOS on Biaxial-Strained-SOI (SSOI) Substrates

2007 · Andy Wei, Stefan Duenkel, et al. · ECS Transactions · 15

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From the present to the future: Scaling of planar VLSI-CMOS devices towards 3D-FinFETs and beyond 10nm CMOS technologies; manufacturing challenges and future technology concepts

2015 · Jan Hoentschel, A. Wei · China Semiconductor Technology International Conference (CSTIC) · 14

Strained Silicon-On-Insulator - Fabrication and Characterization

2007 · Manfred Reiche, C. Himcinschi, et al. · ECS Transactions · 13

Tradeoffs of current drive vs. short-channel effect in deep-submicrometer bulk and SOI MOSFETs

2002 · L.T. Su, Hang Hu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13

Works count: 80

Citation count: 1,636

H-index: 19

I10-index: 30