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David Sotta

Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate
2017 · A. Even, G. Laval, et al. · Applied Physics Letters · 127
Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate
2021 · Amelie Dussaigne, Patrick Le Maitre, et al. · Applied Physics Express · 84
Full InGaN red light emitting diodes
2020 · A. Dussaigne, F. Barbier, et al. · Journal of Applied Physics · 82
InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates
2021 · Ryan C. White, Hongjian Li, et al. · Crystals · 46
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A conventional 45nm CMOS node low-cost platform for general purpose and low power applications
2004 · F. Boeuf, F. Arnaud, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 43
Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice
2020 · A. Dussaigne, F. Barbier, et al. · Journal of Crystal Growth · 28
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MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates
2020 · Ryan C White, Michel Khoury, et al. · Semiconductor Science and Technology · 12
Resonant optical microcavity based on crystalline silicon active layer
2002 · D. Sotta, E. Hadji, et al. · Journal of Applied Physics · 11
Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers
2021 · Ryan C. White, Michel Khoury, et al. · Crystals · 9
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Visible photoluminescence from a-Si:H/SiO2 superlattices fabricated by UHV evaporation
1998 · K. Nishimoto, David Sotta, et al. · Journal of Luminescence · 9
Epitaxial growth of germanium dots on Si (001) surface covered by a very thin silicon nitride layer
2002 · M. Derivaz, P. Noé, et al. · Microelectronic Engineering · 7
Metrology and High Resolution Mapping of Shallow Junctions Formed by Low Energy Implant Processes
2006 · Eric Don, Aron Pap, et al. · AIP conference proceedings · 6
Epitaxial growth of germanium dots on silicon (001) surface covered by a very thin dielectric layer
2002 · M Derivaz, P Noé, et al. · Materials Science and Engineering B · 6
Luminescence of silicon thin film and SiGe multiple quantum wells realized on SOI
2001 · V. Calvo, D. Sotta, et al. · Optical Materials · 3
Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates
2001 · D. Sotta, V. Calvo, et al. · Materials Science and Engineering B · 2
Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices
2012 · N. Cherkashin, A. Claverie, et al. · Applied Physics Letters · 1
Silicon-on-insulator photonic bandgap structures for future microphotonic devices
2004 · Emmanuel Hadji, Benoit Cluzel, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Morphological improvement and elimination of V-pits from long-wavelength all-InGaN based uLEDs grown by MOCVD on compliant substrates
2021 · Ryan White, Michel Khoury, et al. · Gallium Nitride Materials and Devices
Relaxed InGaN engineered substrates with lattice parameter of 3,205A and beyond enabling direct emission at 630nm
2019 · Eric Guiot, David Sotta, et al. · Compound Semiconductor Week (CSW)
Long wavelength emission on relaxed InGaN substrates (Conference Presentation)
2017 · Armelle Even, Gautier Laval, et al. · Gallium Nitride Materials and Devices
Nanooptics and silicon photonic crystals
2004 · Sotta, D., Zelsmann, M., et al. · HAL
Works count: 22
Citation count: 477
H-index: 9
I10-index: 8
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