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Hiromichi Ohashi

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
2003 · W. Saito, Y. Takada, et al. · IEEE Transactions on Electron Devices · 419
Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
2004 · Wataru Saito, Ichiro Omura, et al. · Solid-State Electronics · 144
SiC-SIT Circuit Breakers With Controllable Interruption Voltage for 400-V DC Distribution Systems
2013 · Yukihiko Sato, Yasunori Tanaka, et al. · IEEE Transactions on Power Electronics · 111
Diamond Schottky-pn diode with high forward current density and fast switching operation
2009 · Toshiharu Makino, Satoshi Tanimoto, et al. · Applied Physics Letters · 100
High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator
2006 · S. Yagi, M. Shimizu, et al. · Solid-State Electronics · 98
Oscillation effects in IGBT's related to negative capacitance phenomena
1999 · I. Omura, W. Fichtner, et al. · IEEE Transactions on Electron Devices · 68
Negative electron affinity of diamond and its application to high voltage vacuum power switches
2013 · D. Takeuchi, S. Koizumi, et al. · physica status solidi (a) · 60
GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels
2018 · Akira Nakajima, Shunsuke Kubota, et al. · IET Power Electronics · 57
IGBT negative gate capacitance and related instability effects
1997 · I. Omura, H. Ohashi, et al. · IEEE Electron Device Letters · 51
Carrier injection enhancement effect of high voltage MOS devices-device physics and design concept
2002 · I. Omura, T. Ogura, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 49
Improvement in Joint Reliability of SiC Power Devices by a Diffusion Barrier Between Au-Ge Solder and Cu/Ni(P)-Metalized Ceramic Substrates
2011 · Fengqun Lang, Hiroshi Yamaguchi, et al. · Journal of Electronic Materials · 48
High-efficiency high-power dc-dc converter for energy and space saving of power-supply system in a data center
2011 · Rejeki Simanjorang, H. Yamaguchi, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 48
Power Electronics Innovation with Next Generation Advanced Power Devices
2003 · Hiromichi Ohashi, Ichiro Omura, et al. · International Telecommunications Energy Conference (INTELEC) · 45
Snubber Circuit for High-Power Gate Turn-Off Thyristors
1983 · Hiromichi Ohashi · IEEE Transactions on Industry Applications · 45
Reliability issues of SiC power MOSFETs toward high junction temperature operation
2009 · Satoshi Tanimoto, Hiromichi Ohashi · physica status solidi (a) · 43
Novel exact power loss design method for high output power density converter
2006 · Kazuto Takao, Hirofumi Irokawa, et al. · IEEE Power Electronics Specialists Conference (PESC) · 41
Current chopping phenomena of medium voltage circuit breakers
1977 · M. Murano, S. Yanabu, et al. · IEEE Transactions on Power Apparatus and Systems · 41
High-Voltage Vacuum Switch with a Diamond p–i–n Diode Using Negative Electron Affinity
2012 · Daisuke Takeuchi, Toshiharu Makino, et al. · Japanese Journal of Applied Physics · 40
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Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's
1987 · A. Nakagawa, Y. Yamaguchi, et al. · IEEE Transactions on Electron Devices · 40
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss
2018 · T. Saraya, K. Itou, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 39
A study on GTO turn-off failure mechanism
1981 · H. Ohashi, A. Nakagawa · Technical digest - International Electron Devices Meeting/Technical digest · 37
Role of Simulation Technology for the Progress in Power Devices and Their Applications
2013 · Hiromichi Ohashi, Ichiro Omura · IEEE Transactions on Electron Devices · 36
High Power Density Design Methodology
2007 · Y. Hayashi, K. Takao, et al. · Power Conversion Conference · 36
Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO
1984 · A. Nakagawa, H. Ohashi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 36
Experimental verification of a 3D scaling principle for low Vce(sat) IGBT
2016 · K. Kakushima, T. Hoshii, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
Works count: 204
Citation count: 3,209
H-index: 29
I10-index: 80
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