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Michael R. Houlton
Observed names:
M R Houlton,
M. R. HOULTON,
M. R. Houlton,
M.R Houlton,
M.R. Houlton
Institution:
Qinetiq (United Kingdom)
Observed institutions:
Qinetiq (United Kingdom),
Research Complex at Harwell,
Materials Development (United States),
United Kingdom Atomic Energy Authority
OpenAlex ID:
A5113588568
Atmospheric impregnation of porous silicon at room temperature
1991
·
L. T. Canham
, M. R. Houlton
, et al.
·
Journal of Applied Physics
·
381
Derivatized Mesoporous Silicon with Dramatically Improved Stability in Simulated Human Blood Plasma
1999
·
L. T. Canham
, C. L. Reeves
, et al.
·
Advanced Materials
·
177
On the origin of blue luminescence arising from atmospheric impregnation of oxidized porous silicon
1996
·
L.T Canham
, A Loni
, et al.
·
Thin Solid Films
·
101
The improvement by a CVD silica coating of the oxidation behaviour of a 20% Cr/25% Ni niobium stabilized stainless steel in carbon dioxide
1982
·
M.J Bennett
, M.R Houlton
, et al.
·
Corrosion Science
·
46
The interaction between silicon nitride and several iron, nickel and molybdenum-based alloys
1979
·
M. J. Bennett
, M. R. Houlton
·
Journal of Materials Science
·
45
Determination of fluorine in uranium oxyfluoride particles as an indicator of particle age
2008
·
R. Kips
, A.J. Pidduck
, et al.
·
Spectrochimica Acta Part B Atomic Spectroscopy
·
37
The influence of surface ion implantation upon the oxidation behaviour of a 20% Cr-25% Ni, niobium stabilized austenitic stainless steel, in carbon dioxide, at 825°C
1980
·
M.J. Bennett
, G. Dearnaley
, et al.
·
Corrosion Science
·
36
The growth and properties of In-doped metalorganic vapor phase epitaxy interdiffused multilayer process (HgCd)Te
1991
·
J. S. Gough
, M. R. Houlton
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
32
Radiative recombination channels due to hydrogen in crystalline silicon
1989
·
L.T. Canham
, M.R. Dyball
, et al.
·
Materials Science and Engineering B
·
30
The influence of the surface ion implantation of aluminium and yttrium upon the oxidation behaviour of a Fe-15% Cr-4% Al Fecralloy® stainless steel, in air, at 1100°C
1980
·
M.J. Bennett
, M.R. Houlton
, et al.
·
Corrosion Science
·
30
Growth of fully doped Hg1−xCdxTe heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures
1996
·
C. D. Maxey
, C. L. Jones
, et al.
·
Journal of Electronic Materials
·
26
A study of growth defects in lead germanate crystals
1975
·
M R Houlton
, G R Jones
, et al.
·
Journal of Physics D Applied Physics
·
22
PDF
New metalorganic gallium precursors for the growth of GaAs and AlGaAs by CBE
1992
·
A.C. Jones
, P.A. Lane
, et al.
·
Journal of Crystal Growth
·
21
Inhibition of scale growth on 20Cr–25Ni–Nb stabilized stainless steel by yttrium ion implantation revealed by analytical electron microscopy
1988
·
M. J. Bennett
, J. A. Desport
, et al.
·
Materials Science and Technology
·
16
Nitrogen incorporation into GaAs(N), Al0.3Ga0.7As(N) and In0.15Ga0.85As(N) by chemical beam epitaxy (CBE) using 1,1-dimethylhydrazine
2001
·
J.O. Maclean
, D.J. Wallis
, et al.
·
Journal of Crystal Growth
·
15
Improved chemical beam epitaxy using triisopropylgallium
1993
·
P.A. Lane
, T. Martin
, et al.
·
Materials Science and Engineering B
·
14
As Doping in (Hg,Cd)Te: An Alternative Point of View
2008
·
Janet E. Hails
, Stuart J.C. Irvine
, et al.
·
Journal of Electronic Materials
·
13
The role of surface adsorbates in the metalorganic vapor phase epitaxial growth of (Hg,Cd)Te onto (100) GaAs Substrates
1995
·
J. Giess
, J. E. Hails
, et al.
·
Journal of Electronic Materials
·
11
Control of the electrical properties of In-doped HgCdTe grown by MOVPE for IR detector applications
1991
·
M L Young
, M G Astles
, et al.
·
Semiconductor Science and Technology
·
11
PDF
Product Yields from Electron-Irradiated Cotton Cellulose
1966
·
F. L. Dalton
, M. R. Houlton
·
Radiation Research
·
11
n-type doping of MCT layers grown by MOVPE (IMP)
1991
·
J.S. Gough
, M.R. Houlton
, et al.
·
Materials Letters
·
10
THE INFLUENCE OF CERIUM AND YTTRIUM ION IMPLANTATION UPON THE OXIDATION BEHAVIOUR OF A 20% Cr/25% Ni/Nb STABILISED STAINLESS STEEL, IN CARBON DIOXIDE, AT 825°C
1982
·
M.J. Bennett
, G. Dearnaley
, et al.
·
Elsevier eBooks
·
9
Oxidation behaviour of fecralloy and 20/25/Nb stainless steels and a nickel-based alloy, PE16, in argon containing 7 μatm water vapour and 375 μatm hydrogen
1978
·
M.J. Bennett
, M.R. Houlton
·
Journal of Nuclear Materials
·
8
Gas Yields from Electron-Irradiated Cotton Cellulose
1963
·
F. L. DALTON
, M. R. HOULTON
, et al.
·
Nature
·
8
SIMS depth resolution studies in Al x Ga 1− x As using specially grown MBE samples
1993
·
M. R. Houlton
, G. W. Blackmore
, et al.
·
Surface and Interface Analysis
·
7
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Works count:
44
Citation count:
1,154
H-index:
15
I10-index:
21
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