Author

Larry E. Tarof

Observed names: L. E. Tarof, L. Tarof, L.E. Tarof, Larry Tarof

Observed institutions: Georgia Institute of Technology, Nortel (Canada), Bell (Canada)

OpenAlex ID: A5113590853

High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes

1993 · L.E. Tarof, J. Yu, et al. · IEEE Photonics Technology Letters · 79

Planar InP/InGaAs avalanche photodetectors with partial charge sheet in device periphery

1990 · L. E. Tarof, D. G. Knight, et al. · Applied Physics Letters · 71

Theoretical study of device sensitivity and gain saturation of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

1996 · J.W. Parks, A.W. Smith, et al. · IEEE Transactions on Electron Devices · 64

Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

1995 · C.L.F. Ma, M.J. Deen, et al. · IEEE Transactions on Electron Devices · 61

A simplified approach to time-domain modeling of avalanche photodiodes

1998 · A. Bandyopadhyay, M.J. Deen, et al. · IEEE Journal of Quantum Electronics · 56

Multiplication in separate absorption, grading, charge, and multiplication InP-InGaAs avalanche photodiodes

1995 · C.L.F. Ma, M.J. Deen, et al. · IEEE Journal of Quantum Electronics · 39

Planar InP-InGaAs avalanche photodetectors with n-multiplication layer exhibiting a very high gain-bandwidth product

1990 · L.E. Tarof · IEEE Photonics Technology Letters · 39

Numerical simulation of avalanche breakdown within InP-InGaAs SAGCM standoff avalanche photodiodes

1997 · J.N. Haralson, J.W. Parks, et al. · Journal of Lightwave Technology · 34

Planar InP/InGaAs avalanche photodetector with gain-bandwidth product in excess of 100 GHz

1991 · L.E. Tarof · Electronics Letters · 29

Epitaxial layer thickness measurements by reflection spectroscopy

1989 · L. E. Tarof, C. J. Miner, et al. · Journal of Electronic Materials · 29

Characterization and Modeling of SAGCM InP/InGaAs Avalanche Photodiodes for Multigigabit Optical Fiber Communications

1997 · C.L.F. Ma, M.J. Deen, et al. · Advances in imaging and electron physics · 25

Planar InP-InGaAs single-growth avalanche photodiodes with no guard rings

1995 · L.E. Tarof, R. Bruce, et al. · IEEE Photonics Technology Letters · 25

Low frequency noise in separate absorption, grading,chargeand multiplication (SAGCM) avalanche photodiodes

1996 · X. Zhao, M.J. Deen, et al. · Electronics Letters · 22

Temperature measurements of separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's)

1993 · L.E. Tarof, J. Yu, et al. · IEEE Photonics Technology Letters · 22

Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes

1994 · J. Yu, L.E. Tarof, et al. · IEEE Photonics Technology Letters · 18

Device parameters extraction in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

1995 · C.L.F. Ma, M.J. Deen, et al. · IEEE Transactions on Electron Devices · 13

Epitaxial layer thickness measurement of double heterostructures using reflectance spectroscopy

1990 · L. E. Tarof, C. J. Miner, et al. · Journal of Applied Physics · 12

Multigigabit networks: the challenge

1992 · C. Rolland, L.E. Tarof, et al. · IEEE LTS · 9

Modelling of breakdown voltage and its temperature dependence in SAGCM InP/InGaAs avalanche photodiodes

2002 · C.L.F. Ma, M.J. Deen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8

Design and whole-wafer performance of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

1994 · Larry E. Tarof, Jeffrey C. Yu, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 8

DC and noise characteristics of InP-based avalanche photodiodes for optical communication applications

2002 · C.L.F. Ma, M.J. Deen, et al. · Conference proceedings - Canadian Conference on Electrical and Computer Engineering · 6

InGaAsP compositional determination from reflectance spectroscopy of InGaAsP/InP heterostructures

1990 · L. E. Tarof, C. J. Miner, et al. · Journal of Applied Physics · 6

Macroscopic Device Simulation of InGaAs/InP Based Avalanche Photodiodes

1998 · Joseph W. Parks, Kevin F. Brennan, et al. · VLSI design · 4

PDF

A 10-Gb/s Optical Receiver With Monolithically Integrated PIN Photodiode, Novel AGC, and Sensitivity of –27.1 dBm for BER 10-3

2024 · Wenyu Zhou, Larry Tarof, et al. · IEEE Solid-State Circuits Letters · 3

Temperature characterization of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

1994 · Jeffrey C. Yu, Larry E. Tarof, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3

Works count: 36

Citation count: 691

H-index: 15

I10-index: 17