Author

Rabah Cherfi

Observed names: Cherfi, R., Cherfi, Rabah, R Cherfi, R. Cherfi

Institution: University of Sciences and Technology Houari Boumediene

Observed institutions: Centre National de la Recherche Scientifique, University of Sciences and Technology Houari Boumediene, Institut d'Électronique et des Technologies du numéRique, Université Rennes 1, Université de Rennes

OpenAlex ID: A5113598579

Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

2011 · F. Kezzoula, A. Hammouda, et al. · Applied Surface Science · 23

Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effect

2008 · A. Ben Abdelmoumen, R. Cherfi, et al. · Thin Solid Films · 19

Study of boron doped amorphous silicon lightly hydrogenated prepared by DC magnetron sputtering for infrared detectors applications

2020 · Khadidja Ketroussi, Rabah Cherfi, et al. · Infrared Physics & Technology · 13

PDF

Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1−xGex) deposited by DC magnetron sputtering at high rate

2006 · A. Fedala, R. Cherfi, et al. · Materials Science in Semiconductor Processing · 13

Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique

2010 · Aïssa Keffous, Abdelhak Cheriet, et al. · Applied Surface Science · 12

The annealing temperature effect on the electrical properties of boron‐doped hydrogenated amorphous silicon a‐Si:H(B)

2010 · N. Khelifati, S. Tata, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 9

Correlation between Physicochemical and Electrical Properties of Hydrogenated Amorphous Silicon Doped with Boron: Effect of Thermal Annealing

2009 · H.Y. Seba, R. Cherfi, et al. · Materials science forum · 4

Stability of Microcrystalline Silicon TFTs

2008 · Khaled Belarbi, Khalid Kandoussi, et al. · ECS Transactions · 4

PDF

N and P type top‐gate microcrystalline silicon TFTs processed at low temperature (T < 200 °C) on the same glass substrate

2010 · Isman Souleiman, Khalid Kandoussi, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 3

Deposition temperature effects on the characteristics of a‐Si:H deposited by pulsed DC magnetron sputtering

2009 · R. Cherfi, A. Abdelmoumene, et al. · physica status solidi (a) · 3

Hydrogen interaction on metal/hydrogenated amorphous silicon Schottky structures: adsorption/desorption effects

2001 · K. Laïhem, R. Cherfi, et al. · Thin Solid Films · 3

High sensing efficiency for low NH3 vapour concentration of thin ZnO/p-Si hetero-junctions

2025 · S. Tata, L. Chabane, et al. · Sensors and Actuators A Physical · 2

Effects of trimethylphosphine incorporation on hydrogenated amorphous silicon (a-Si:H) properties

2009 · A. Brighet, R. Cherfi, et al. · Physics Procedia · 2

PDF

High mobility microcrystalline silicon p-channel TFTs fabricated at low temperature

2009 · Kandoussi, Khalid, Souleiman, Ismaïl, et al. · HAL · 2

Thin Films Hydrogenated Silicon Deposited by Direct Current Magnetron Sputtering at High Rate