Author

Miao‐Chan Tsai

Observed names: M.-L. Tsai, M.-T. Tsai, Miao-Chan Tsai, Tsai, Miao-Chan; Leung, Benjamin; Balakrishnan, Ganesh; Wang, George T.

Institution: University of New Mexico

Observed institutions: University of New Mexico, Chang Gung University, Epistar (Taiwan), Yale University, Sandia National Laboratories, National Changhua University of Education

OpenAlex ID: A5113603334

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

2009 · Yen-Kuang Kuo, Jih-Yuan Chang, et al. · Applied Physics Letters · 234

Light-Emitting Metasurfaces: Simultaneous Control of Spontaneous Emission and Far-Field Radiation

2018 · Sheng Liu, Aleksandr Vaskin, et al. · Nano Letters · 195

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Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

2010 · Yen-Kuang Kuo, Jih-Yuan Chang, et al. · Optics Letters · 149

Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes

2010 · Yen-Kuang Kuo, Miao-Chan Tsai, et al. · IEEE Journal of Quantum Electronics · 107

Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

2010 · Chih-Teng Liao, Miao-Chan Tsai, et al. · Journal of Applied Physics · 78

Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

2009 · Yen-Kuang Kuo, Miao-Chan Tsai, et al. · Optics Communications · 71

Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes

2009 · Sheng-Horng Yen, Miao-Chan Tsai, et al. · IEEE Photonics Technology Letters · 71

Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers

2011 · Yen-Kuang Kuo, Tsun-Hsin Wang, et al. · Applied Physics Letters · 62

Advantages of blue InGaN light-emitting diodes with AlGaN barriers

2010 · Jih-Yuan Chang, Miao-Chan Tsai, et al. · Optics Letters · 59

Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers

2011 · Miao-Chan Tsai, Sheng-Horng Yen, et al. · Applied Physics Letters · 44

Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses

2010 · Miao-Chan Tsai, Sheng-Horng Yen, et al. · IEEE Photonics Technology Letters · 38

Improvement in Electron Overflow of Near-Ultraviolet InGaN LEDs by Specific Design on Last Barrier

2011 · Yen-Kuang Kuo, Ya-Hsuan Shih, et al. · IEEE Photonics Technology Letters · 34

Investigation of Optical Performance of InGaN MQW LED With Thin Last Barrier

2010 · Sheng-Horng Yen, Meng-Lun Tsai, et al. · IEEE Photonics Technology Letters · 34

Numerical analysis on the effects of bandgap energy and polarization of electron blocking layer in near-ultraviolet light-emitting diodes

2012 · Yen-Kuang Kuo, Yu-Han Chen, et al. · Applied Physics Letters · 32

Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes

2009 · Yen-Kuang Kuo, Syuan-Huei Horng, et al. · Applied Physics A · 28

Enhancement of Light Power for Blue InGaN LEDs by Using Low-Indium-Content InGaN Barriers

2009 · Yen-Kuang Kuo, Miao-Chan Tsai, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 28

Investigation of blue InGaN light-emitting diodes with step-like quantum well

2011 · Miao-Chan Tsai, Sheng-Horng Yen, et al. · Applied Physics A · 19

Low Resistivity GaN-Based Polarization-Induced Tunnel Junctions

2013 · Miao-Chan Tsai, Benjamin Leung, et al. · Journal of Lightwave Technology · 16

Correlation of barrier material and quantum‐well number for InGaN/(In)GaN blue light‐emitting diodes

2010 · Jih‐Yuan Chang, Yen‐Kuang Kuo, et al. · physica status solidi (a) · 15

Carrier Transportation and Internal Quantum Efficiency of Blue InGaN Light-Emitting Diodes With $P$-Doped Barriers

2010 · Miao-Chan Tsai, Sheng-Horng Yen, et al. · IEEE Photonics Technology Letters · 15

Tandem Structure for Efficiency Improvement in GaN Based Light-Emitting Diodes

2014 · Miao-Chan Tsai, Benjamin Leung, et al. · Journal of Lightwave Technology · 12

Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers

2011 · Tsun-Hsin Wang, Jih-Yuan Chang, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 11

Effect of spontaneous and piezoelectric polarization on optical characteristics of ultraviolet AlGaInN light-emitting diodes

2009 · Miao-Chan Tsai, Sheng-Horng Yen, et al. · Optics Communications · 10

Advantages of near‐ultraviolet light‐emitting diodes with polarization‐matched InGaN/AlGaInN multi‐quantum wells

2012 · Yen‐Kuang Kuo, Yu‐Han Chen, et al. · physica status solidi (a) · 7

Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode

2005 · M.-F. Huang, M.-L. Tsai, et al. · Applied Physics A · 7

Works count: 47

Citation count: 1,414

H-index: 17

I10-index: 23