Author

Rieko Tanaka

Observed institutions: Toshiba (Japan), KIOXIA Corporation (Japan)

OpenAlex ID: A5113613236

A 151-mm$^{2}$ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology

2011 · Koichi Fukuda, Yoshihisa Watanabe, et al. · IEEE Journal of Solid-State Circuits · 9

A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology

2011 · Koichi Fukuda, Yoshihisa Watanabe, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 6

Improved Disturb-Free Memory Window, Retention and Endurance in Low-Voltage 3D-FeFETs by Controlling Strain and Trap Properties in Interfacial Layers

2026 · Kunifumi Suzuki, Kiwamu Sakuma, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Horizontal Channel Flash to Explore the Limits of 3D Flash Memory

2025 · Minoru Oda, Kosuke Sakamawari, et al. · International Conference on Solid State Devices and Materials (SSDM)

Works count: 4

Citation count: 15

H-index: 2

I10-index: