Author

H. Etienne

Observed name: Etienne, H.

Observed institutions: Centre National de la Recherche Scientifique, Cameca (France), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Ibs (France), Institut de Recherche pour le Développement

OpenAlex ID: A5113619545

Micro and nano-structuration of silicon by femtosecond laser: Application to silicon photovoltaic cells fabrication

2007 · M. Halbwax, T. Sarnet, et al. · Thin Solid Films · 212

Femtosecond laser for black silicon and photovoltaic cells

2008 · T. Sarnet, M. Halbwax, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 43

Femtosecond laser texturization for improvement of photovoltaic cells : black silicon

2010 · Torres, R., Vervisch, V., et al. · HAL · 29

PULSION® HP: Tunable, High Productivity Plasma Doping

2011 · S. B. Felch, F. Torregrosa, et al. · AIP conference proceedings · 16

Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

2009 · Wei-Yip Loh, H. Etienne, et al. · IEEE Electron Device Letters · 16

Plasma doping of silicon fin structures

2011 · S. Felch, C. Hobbs, et al. · International Workshop on Junction Technology · 13

Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing

2008 · V. Vervisch, H. Etienne, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 9

Deep Trench Doping by Plasma Immersion Ion Implantation in Silicon

2006 · S. Nizou, V. Vervisch, et al. · AIP conference proceedings · 8

Simulation of BF[sub 3] plasma immersion ion implantation into silicon

2012 · A. Burenkov, A. Hahn, et al. · AIP conference proceedings · 6

Optimization of Etching∕Deposition Phenomena for BF[sub 3] and B[sub 2]H[sub 6] Plasma Doping using PULSION®

2011 · S. B. Felch, H. Etienne, et al. · AIP conference proceedings · 5

Ultra shallow junctions fabrication by Plasma Immersion Implantation on PULSION® followed by different annealing processes

2008 · H. Etienne, V. Vervisch, et al. · International Workshop on Junction Technology · 5

Black silicon recent improvements for photovoltaic cells

2008 · T. Sarnet, R. Torres, et al. · International Congress on Applications of Lasers & Electro-Optics (ICALEO) · 2

Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities?

2015 · E.-A. Kouadri-boudjelthia, E. Ntsoenzok, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1

Comparison of Different Characterization Techniques for Plasma Implanted Samples having Highly Doped and Shallow Implanted Layers: Dose Measurement, Profile, Etching or Deposition Characterizations

2011 · F. Torregrosa, C. Grosjean, et al. · AIP conference proceedings · 1

Different Profile Responses to Dose Variation for B[sub 2]H[sub 6] and BF[sub 3] Plasma Doping using PULSION®

2011 · Y. Spiegel, F. Torregrosa, et al. · AIP conference proceedings

Physical and Electrical Characterization of 120 nm Technology Node Devices using PULSION® Plasma Doping

2011 · Y. Spiegel, F. Torregrosa, et al. · AIP conference proceedings

Optimization of laser annealing for ultra-shallow junctions realization : characterization of homogeneity by laser beam induced current

2011 · Larmande, Y., Vervisch, V., et al. · HAL

Laser-induced periodic structures for photovoltaic applications

2010 · Torres, R., Derrien, T.J.Y., et al. · HAL

Works count: 19

Citation count: 367

H-index: 8

I10-index: 6