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Yung-Chen Cheng

OpenAlex ID: A5113630093
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
2000 · Yen-Sheng Lin, Kung-Jeng Ma, et al. · Applied Physics Letters · 243
Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
2002 · Shih-Wei Feng, Yung-Chen Cheng, et al. · Journal of Applied Physics · 107
Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
2004 · Yung-Chen Cheng, En-Chiang Lin, et al. · Applied Physics Letters · 58
Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
2002 · Shih-Wei Feng, Yung-Chen Cheng, et al. · Applied Physics Letters · 48
Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS2 films
2016 · Kuang-I Lin, Yen-Jen Chen, et al. · Journal of Applied Physics · 16
Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures
2001 · Shih-Wei Feng, Yung-Chen Cheng, et al. · physica status solidi (b) · 9
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Wide range variation of resonance wavelength of GaZnO plasmonic metamaterials grown by molecular beam epitaxy with slight modification of Zn effusion cell temperatures
2021 · Yung-Chen Cheng, Hsiang-Chen Wang, et al. · Journal of Alloys and Compounds · 8
Fast Real-Space Imaging of the Exciton Complexes in WSe2 and WS2 Monolayers Using Multiphoton Microscopy
2020 · Kuang-I Lin, Shiue-Yuan Shiau, et al. · The Journal of Physical Chemistry C · 8
Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs
2017 · Hsiang-Chen Wang, Meng-Chu Chen, et al. · Nanoscale Research Letters · 5
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Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy
2015 · Kuang-I Lin, Yen-Jen Chen, et al. · Japanese Journal of Applied Physics · 5
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Effects of interfacial layers in InGaN∕GaN quantum-well structures on their optical and nanostructural properties
2005 · Yung-Chen Cheng, Cheng-Ming Wu, et al. · Journal of Applied Physics · 5
Surface Characterization and Tribological Behavior of Graphene-Reinforced Cellulose Composites Prepared by Large-Area Spray Coating on Flexible Substrate
2020 · Shih-Chen Shi, Chih-Chia Wang, et al. · Coatings · 3
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The action of silicon doping in the first two to five barriers of eight periods In 0.2 Ga 0.8 N/GaN multiple quantum wells of blue LEDs
2016 · Meng-Chu Chen, Yung-Chen Cheng, et al. · Journal of Luminescence · 3
Dynamic carrier relaxation in InGaN/GaN multiple quantum well structures
2002 · Shih-Wei Feng, Yung-Chen Cheng, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2
Carrier dynamics in InGaN/GaN multiple quantum well structures
2001 · Shih-Wei Feng, Yung-Chen Cheng, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2
Partially polycrystalline GaN 1− x As x alloys grown on GaAs in the middle composition range achieving a smaller band gap
2017 · Hong-Ming Wu, Kuang-I Lin, et al. · Japanese Journal of Applied Physics · 1
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Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures
2004 · Tsung-Yi Tang, Chih-Chung Teng, et al. · Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
Quantum dot formation with silicon doping in InGaN/GaN quantum well structures and its implications in radiative mechanisms
2003 · Yung-Chen Cheng, Cheng-Hua Tseng, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Works count: 18
Citation count: 523
H-index: 8
I10-index: 5
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