Author

H. Yonezu

Observed names: H Yonezu, H. YONEZU, Hiroo YONEZU, Hiroo Yonezu, Hiroo Yonezu Hiroo Yonezu, Yonezu Hiroo

Institution: Toyohashi University of Technology

Observed institutions: Linköping University, NEC (Japan), Shizuoka University, Toyohashi University of Technology, Osaka Prefecture University, Institute of Electronics, Information and Communication Engineers, Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional

OpenAlex ID: A5113635651

Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(1 0 0) substrates

1998 · Y Takagi, H Yonezu, et al. · Journal of Crystal Growth · 129

Control of structural defects in group III V N alloys grown on Si

2002 · Hiroo Yonezu · Semiconductor Science and Technology · 116

Degradation of (AlGa)As DH lasers due to facet oxidation

1978 · T. Yuasa, M. Ogawa, et al. · Applied Physics Letters · 101

Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

2002 · Yuzo Furukawa, Hiroo Yonezu, et al. · Japanese Journal of Applied Physics · 76

Degradation mechanism of (Al · Ga)As double-heterostructure laser diodes

1974 · H. Yonezu, I. Sakuma, et al. · Applied Physics Letters · 76

Reduction of threading dislocation density in InP-on-Si heteroepitaxy with strained short-period superlattices

1996 · K. Samonji, H. Yonezu, et al. · Applied Physics Letters · 69

Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

2001 · Kenji Momose, Hiroo Yonezu, et al. · Applied Physics Letters · 68

Step control of vicinal 6H–SiC(0001) surface by H2 etching

2005 · A. Nakajima, H. Yokoya, et al. · Journal of Applied Physics · 65

An AlGaAs window structure laser

1979 · H. Yonezu, M. Ueno, et al. · IEEE Journal of Quantum Electronics · 61

Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers

1998 · J. Luyo-Alvarado, M. Meléndez-Lira, et al. · Journal of Applied Physics · 53

Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

2008 · Keisuke Yamane, Tomohito Kobayashi, et al. · Journal of Crystal Growth · 50

III–V epitaxy on Si for photonics applications

2008 · Hiroo Yonezu, Yuzo Furukawa, et al. · Journal of Crystal Growth · 48

Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrate

2001 · Yasuhiro Fujimoto, Hiroo Yonezu, et al. · Applied Physics Letters · 48

New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization –A Refractive Index Guiding with Zn Doping

1977 · Hiroo Yonezu, Yoshishige Matsumoto, et al. · Japanese Journal of Applied Physics · 48

Horizontal Mode Deformation and Anomalous Lasing Properties of Stripe Geometry Injection Lasers–Experiment

1977 · Kohroh Kobayashi, Roy Lang, et al. · Japanese Journal of Applied Physics · 46

Analog integrated circuits for the Lotka-Volterra competitive neural networks

1999 · T. Asai, M. Ohtani, et al. · IEEE Transactions on Neural Networks · 45

Lasing Characteristics in a Degraded GaAs–AlxGa1-xAs Double Heterostructure Laser

1974 · Hiroo Yonezu, Masayasu Ueno, et al. · Japanese Journal of Applied Physics · 40

Properties of Ga-interstitial defects in AlxGa1−xNyP1−y

2005 · N. Q. Thinh, I. P. Vorona, et al. · Physical Review B · 39

Elemental devices, circuits and processes for a monolithic Si/III–V–N alloy OEIC

2004 · H. Yonezu, Y. Furukawa, et al. · Optical Materials · 36

Increase in luminescence efficiency of GaPN layers by thermal annealing

2003 · A. Utsumi, H. Yonezu, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 36

Mirror degradation in AlGaAs double-heterostructure lasers

1979 · H. Yonezu, K. Endo, et al. · Journal of Applied Physics · 36

Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)m(GaAs)n strained short-period superlattices and InGaAs alloy layers grown on GaAs

1999 · K. Samonji, H. Yonezu, et al. · Journal of Applied Physics · 35

CW Optical Power from (Al·Ga)As Double Heterostructure Lasers

1976 · Hiroo Yonezu, Tonao Yuasa, et al. · Japanese Journal of Applied Physics · 35

Monolithic Implementation of Elemental Devices for Optoelectronic Integrated Circuit in Lattice-Matched Si/III–V–N Alloy Layers

2006 · Yuzo Furukawa, Hiroo Yonezu, et al. · Japanese Journal of Applied Physics · 33

Point defects in dilute nitride III-N–As and III-N–P

2006 · W.M. Chen, I.A. Buyanova, et al. · Physica B Condensed Matter · 33

Works count: 225

Citation count: 2,836

H-index: 29

I10-index: 86