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Heinz A. Klose

Observed names: H Klose, H. A. Klose, H. Klose, H.A Klose, H.A. Klose, Heinz Klose, Klose H.A., Klose, H. A., Klose, H.A. (Ingenieurbuero OPTOMET, Oldenburg (Germany))
OpenAlex ID: A5113656804
Hydrogen-related deep levels in proton-bombarded silicon
1984 · K Irmscher, H Klose, et al. · Journal of Physics C Solid State Physics · 133
DLTS study on deep level defects in Cz-p-Si due to heat treatment at 600 to 900 °C
1987 · K. Schmalz, F.-G. Kirscht, et al. · physica status solidi (a) · 32
Electric field enhanced electron emission from gold acceptor level and A-centre in silicon
1983 · K. Irmscher, H. Klose, et al. · physica status solidi (a) · 27
Removal of Electrically Active Defects in Silicon by 340 MeV Xe ion Bombardment
1995 · I. V. Antonova, A. V. Dvurechenskii, et al. · physica status solidi (a) · 13
On the Determination of Deep Level Concentration Profiles by DLTS Measurements
1985 · K. Maass, K. Irmscher, et al. · physica status solidi (a) · 13
On the intrinsic gettering in Fe-contaminated CzSi
1987 · K. Schmalz, F.-G. Kirscht, et al. · physica status solidi (a) · 9
On the photocapacitance of the MIS Structure AlSi3N4n-GaAs
1974 · H. Klose, Yu. E. Maronchuk, et al. · physica status solidi (a) · 9
Radiation-Induced Defects in Silicon Due to Low-Energetic Ion-Assisted Deposition of Indium Tin Oxide
1989 · J. Th. Zettler, J. Bollmann, et al. · physica status solidi (a) · 8
Copper in silicon n+-p junctions
1972 · R. Böhm, H. Klose · physica status solidi (a) · 8
On the measurement of degradation and recovery of scintillating plastic fibres
1998 · H.A Klose, P Goppelt-Langer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 7
Amorphous Silicon–Phosphorus Layers
1983 · A. V. Dvueechenskii, I. A. Ryazantsev, et al. · physica status solidi (a) · 6
Ion Beam Contacting of Silicon I. Aluminium in p-Silicon
1983 · H. Klose, A. Mertens, et al. · physica status solidi (a) · 6
On the determination of the carrier concentration of GaAs1−xPx
1973 · G. Heine, H. Klose, et al. · physica status solidi (a) · 6
Gettering of copper in proton- and helium-bombarded buried regions of gallium phosphide
1988 · C. Aschekon, H. A. Klose, et al. · physica status solidi (a) · 5
Big channeling effects at low-energy ion implantation in silicon
1986 · J. Bollmann, H. Klose, et al. · physica status solidi (a) · 5
Capacitance of p+−n junctions with deep centres
1973 · G. Beister, K. Duckert, et al. · physica status solidi (a) · 5
Capacitance of p–n junctions in GaP with deep centres
1973 · H. Klose, P. Hottewitzsch, et al. · physica status solidi (a) · 5
High fluence effects in scintillating plastic fibres by 16 MeV electron irradiation
1996 · H.A. Klose, M. Krause, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 4
On radiation damage of scintillating organic fibres in dependence on energetic electron bombardment
2002 · H.A. Klose, M. Krause, et al. · European Conference on Radiation and Its Effects on Components and Systems · 3
Electrically Active Near-Surface Implantation Defects in Silicon and GaAs
1989 · J. Bollmann, H.A. Klose · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 3
Formation of Schottky junctions in silicon by ion implantation
1986 · J. Bollmann, H. Klose, et al. · physica status solidi (a) · 3
Ion beam contacting of silicon. II. Antimony in n-silicon
1985 · A. Mertens, H. Klose, et al. · physica status solidi (a) · 3
The influence of alkali atoms implanted in silicon on the negative secondary ion emission
1984 · W. Frentrup, M. Griepertrog, et al. · physica status solidi (a) · 3
The liquid crystal technique for the observation of electric fields in p–n and Schottky Junctions
1973 · H. Klose, G. Müller, et al. · physica status solidi (a) · 3
On the potential barrier of Schottky junctions
1972 · H. Klose · physica status solidi (a) · 3
Works count: 52
Citation count: 340
H-index: 8
I10-index: 5
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